Infineon Technologies AG N-Channel Power MOSFET BSC014N04LS

Description
Infineon's 40V and 60V product families feature not only the industry’s lowest R DS(on) but also a perfect switching behavior for fast switching applications. 15% lower R DS(on) and 31% lower figure of merit (R DS(on) x Q g) compared to alternative devices has been realized by advanced thin wafer technology. Summary of Features Optimized for synchronous rectification 15% lower R DS(on) than alternative devices 31% improvement of FOM over similar devices RoHS compliant - halogen free MSL1 rated Benefits Highest system efficiency Less paralleling required Increased power density System cost reduction Very low voltage overshoot Potential Applications Synchronous rectification Solar micro inverter Isolated DC-DC converters Motor control Or-ing switches Applications 48 V intermediate bus converter (IBC) Consumer electronics DIN rail power supplies Domain controller for ADAS and autonomous driving Energy Storage Systems Designers who used this product also designed with IPW60R070CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPT60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IDH08G65C5 | CoolSiC™ Schottky Diodes IPW60R070CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPT60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IDH08G65C5 | CoolSiC™ Schottky Diodes IPW60R070CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPT60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IDH08G65C5 | CoolSiC™ Schottky Diodes
Request a Quote Datasheet
Description
Infineon's 40V and 60V product families feature not only the industry’s lowest R DS(on) but also a perfect switching behavior for fast switching applications. 15% lower R DS(on) and 31% lower figure of merit (R DS(on) x Q g) compared to alternative devices has been realized by advanced thin wafer technology. Summary of Features Optimized for synchronous rectification 15% lower R DS(on) than alternative devices 31% improvement of FOM over similar devices RoHS compliant - halogen free MSL1 rated Benefits Highest system efficiency Less paralleling required Increased power density System cost reduction Very low voltage overshoot Potential Applications Synchronous rectification Solar micro inverter Isolated DC-DC converters Motor control Or-ing switches Applications 48 V intermediate bus converter (IBC) Consumer electronics DIN rail power supplies Domain controller for ADAS and autonomous driving Energy Storage Systems Designers who used this product also designed with IPW60R070CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPT60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IDH08G65C5 | CoolSiC™ Schottky Diodes IPW60R070CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPT60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IDH08G65C5 | CoolSiC™ Schottky Diodes IPW60R070CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPT60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IDH08G65C5 | CoolSiC™ Schottky Diodes
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
N-Channel Power MOSFET - BSC014N04LS - Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
BSC014N04LS
N-Channel Power MOSFET BSC014N04LS
Infineon's 40V and 60V product families feature not only the industry’s lowest R DS(on) but also a perfect switching behavior for fast switching applications. 15% lower R DS(on) and 31% lower figure of merit (R DS(on) x Q g) compared to alternative devices has been realized by advanced thin wafer technology. Summary of Features Optimized for synchronous rectification 15% lower R DS(on) than alternative devices 31% improvement of FOM over similar devices RoHS compliant - halogen free MSL1 rated Benefits Highest system efficiency Less paralleling required Increased power density System cost reduction Very low voltage overshoot Potential Applications Synchronous rectification Solar micro inverter Isolated DC-DC converters Motor control Or-ing switches Applications 48 V intermediate bus converter (IBC) Consumer electronics DIN rail power supplies Domain controller for ADAS and autonomous driving Energy Storage Systems Designers who used this product also designed with IPW60R070CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPT60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IDH08G65C5 | CoolSiC™ Schottky Diodes IPW60R070CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPT60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IDH08G65C5 | CoolSiC™ Schottky Diodes IPW60R070CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPT60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IDH08G65C5 | CoolSiC™ Schottky Diodes

Infineon's 40V and 60V product families feature not only the industry’s lowest R DS(on) but also a perfect switching behavior for fast switching applications. 15% lower R DS(on) and 31% lower figure of merit (R DS(on) x Q g) compared to alternative devices has been realized by advanced thin wafer technology.


Summary of Features

  • Optimized for synchronous rectification
  • 15% lower R DS(on) than alternative devices
  • 31% improvement of FOM over similar devices
  • RoHS compliant - halogen free
  • MSL1 rated

Benefits

  • Highest system efficiency
  • Less paralleling required
  • Increased power density
  • System cost reduction
  • Very low voltage overshoot

Potential Applications

  • Synchronous rectification
  • Solar micro inverter
  • Isolated DC-DC converters
  • Motor control
  • Or-ing switches

Applications

  • 48 V intermediate bus converter (IBC)
  • Consumer electronics
  • DIN rail power supplies
  • Domain controller for ADAS and autonomous driving
  • Energy Storage Systems

Designers who used this product also designed with


  • IPW60R070CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPT60R050G7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IDH08G65C5 |
    CoolSiC™ Schottky Diodes
  • IPW60R070CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPT60R050G7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IDH08G65C5 |
    CoolSiC™ Schottky Diodes
  • IPW60R070CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPT60R050G7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IDH08G65C5 |
    CoolSiC™ Schottky Diodes
Supplier's Site Datasheet
Transistors - BSC014N04LS - ODG (Origin Data Global)
Shenzhen, China
Transistors
BSC014N04LS
Transistors BSC014N04LS
MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS

MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC014N04LS - 127274-BSC014N04LS - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC014N04LS
127274-BSC014N04LS
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC014N04LS 127274-BSC014N04LS
Manufacturer: Infineon Technologies Win Source Part Number: 127274-BSC014N04LS Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 96W (Tc) Family Name: BSC014N04LS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSO8 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 32A (Ta), 100A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 61nC @ 10V Max Input Capacitance: 4300pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.4 mOhm @ 50A, 10V Alternative Parts (Cross-Reference): STL190N4F7AG; STL160N4F7; STL210N4F7AG; Introduction Date: February 03, 2012 ECCN: EAR99 Country of Origin: China, Malaysia Estimated EOL Date: 2026 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 127274-BSC014N04LS
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Family Name: BSC014N04LS
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSO8
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 32A (Ta), 100A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 61nC @ 10V
Max Input Capacitance: 4300pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.4 mOhm @ 50A, 10V
Alternative Parts (Cross-Reference): STL190N4F7AG; STL160N4F7; STL210N4F7AG;
Introduction Date: February 03, 2012
ECCN: EAR99
Country of Origin: China, Malaysia
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS

MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS

Buy Now Datasheet

Technical Specifications

  Infineon Technologies AG ODG (Origin Data Global) Win Source Electronics VAST STOCK CO., LIMITED
Product Category Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number BSC014N04LS BSC014N04LS 127274-BSC014N04LS BSC014N04LS
Product Name N-Channel Power MOSFET Transistors TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC014N04LS MOSFET
Polarity N-Channel; N N-Channel; N-Channel
Transistor Technology / Material Si/SiC
rDS(on) 0.0014 ohms
TJ -55 to 175 C (-67 to 347 F) -55 to 150 C (-67 to 302 F)
Unlock Full Specs
to access all available technical data