BFY193C(P) is a HiRel NPN silicon RF transistor for non-flight applications, identical in fit, form, and function to the flight-qualified BFY193C(ES) variant. It features a hermetically sealed Micro-X1 package, is specified for low noise and high-gain amplification up to 2 GHz with a transition frequency of 8 GHz and a noise figure of 2.3 dB at 2 GHz, and operates from -65 °C to 200 °C. Maximum collector-emitter voltage is 12 V, collector current is 80 mA, and total power dissipation is 580 mW at a heatsink temperature of 104 °C.
HiRel Microwave Transistor
Summary of Features
Potential Applications
Quality level for Engineering Models
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | BFY193C (P) |
| Product Name | HiRel Silicon Bipolar Transistor |
| Package Type | Micro-X |
