Infineon Technologies AG HiRel Silicon Bipolar Transistor BFY182 (P)

Description
HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Hermetically sealed microwave package fT= 8 GHz F = 2.4 dB at 2 GHz Type Variant No. 04 Potential Applications Quality level for Engineering Models Applications Space applications
Request a Quote
Description
HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Hermetically sealed microwave package fT= 8 GHz F = 2.4 dB at 2 GHz Type Variant No. 04 Potential Applications Quality level for Engineering Models Applications Space applications
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

BFY182(P) is a HiRel NPN silicon RF transistor for non-flight applications, sharing the hermetically sealed Micro-X1 package and electrical performance of the BFY182 series, including a transition frequency of 8 GHz, a noise figure of 2.4 dB at 2 GHz, and a collector-emitter voltage rating of 12 V. It operates from -65 °C to 200 °C and meets ESCC Detail Specification No. 5611/006, Type Variant No. 04, but is not screened per Chart F3 of ESCC Generic Specification No. 5010. Maximum collector current is 35 mA, and total power dissipation is 250 mW at temperatures up to 136 °C.

Datasheet Summary
Powered by GS/AI

BFY182(P) is a HiRel NPN silicon RF transistor for non-flight applications, sharing the hermetically sealed Micro-X1 package and electrical performance of the BFY182 series, including a transition frequency of 8 GHz, a noise figure of 2.4 dB at 2 GHz, and a collector-emitter voltage rating of 12 V. It operates from -65 °C to 200 °C and meets ESCC Detail Specification No. 5611/006, Type Variant No. 04, but is not screened per Chart F3 of ESCC Generic Specification No. 5010. Maximum collector current is 35 mA, and total power dissipation is 250 mW at temperatures up to 136 °C.

Suppliers

Company
Product
Description
Supplier Links
HiRel Silicon Bipolar Transistor - BFY182 (P) - Infineon Technologies AG
Neubiberg, Germany
HiRel Silicon Bipolar Transistor
BFY182 (P)
HiRel Silicon Bipolar Transistor BFY182 (P)
HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Hermetically sealed microwave package fT= 8 GHz F = 2.4 dB at 2 GHz Type Variant No. 04 Potential Applications Quality level for Engineering Models Applications Space applications

HiRel Microwave Transistor


Summary of Features

  • HiRel Discrete and Microwave Semiconductor
  • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA.
  • Hermetically sealed microwave package
  • fT= 8 GHz
  • F = 2.4 dB at 2 GHz
  • Type Variant No. 04

Potential Applications

Quality level for Engineering Models


Applications

  • Space applications
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Bipolar RF Transistors
Product Number BFY182 (P)
Product Name HiRel Silicon Bipolar Transistor
Package Type Micro-X
Unlock Full Specs
to access all available technical data