MOSFET N-CH 30V 34A/100A TDSON Product overview: BSC014N03LSGATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 34A, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 34A, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC014N03LSGATMA
Manufacturer: Infineon Technologies
Win Source Part Number: 82831-BSC014N03LSGAT
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TDSON-8
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 34A (Ta), 100A (Tc)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 131nC @ 10V
Max Input Capacitance: 10000pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.4 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance
N-Channel 30V 34A (Ta), 100A (Tc) 2.5W (Ta), 139W (Tc) Surface Mount PG-TDSON-8-1
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MOSFET N-CH 30V 34A/100A TDSON
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| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Utmel Electronic Limited | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-BSC014N03LSGATMA1 | 82831-BSC014N03LSGATMA1 | BSC014N03LSGATMA1TR-ND | 376-BSC014N03LSGATMA1 | BSC014N03LSGATMA1 | BSC014N03LSGATMA1 | BSC014N03LSGATMA1 |
| Product Name | 30V 34A 100A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC014N03LSGATMA1 | Single FETs, MOSFETs | Trans MOSFET N-CH 30V 34A 8-Pin TDSON | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| PD | 2500 milliwatts | 2500 to 139000 milliwatts | 139000 milliwatts | 2500 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | Tape & Reel (TR) | SOT3; PG-TDSON-8 | 8-PowerTDFN | 8-PowerTDFN | +/- 20V | ||
| Packing Method | Tape & Reel (TR) | Tape Reel; Reel - TR | Tape Reel; Tape & Reel (TR) | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | |||
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel |
