Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC018NE2LSI BSC018NE2LSI

Description
Manufacturer: Infineon Technologies Win Source Part Number: 012121-BSC018NE2LSI Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TDSON-8 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 29A (Ta), 100A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 36nC @ 10V Max Input Capacitance: 2500pF @ 12V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.8 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 012121-BSC018NE2LSI Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TDSON-8 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 29A (Ta), 100A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 36nC @ 10V Max Input Capacitance: 2500pF @ 12V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.8 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC018NE2LSI - 012121-BSC018NE2LSI - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC018NE2LSI
012121-BSC018NE2LSI
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC018NE2LSI 012121-BSC018NE2LSI
Manufacturer: Infineon Technologies Win Source Part Number: 012121-BSC018NE2LSI Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TDSON-8 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 29A (Ta), 100A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 36nC @ 10V Max Input Capacitance: 2500pF @ 12V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.8 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 012121-BSC018NE2LSI
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TDSON-8
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 29A (Ta), 100A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 36nC @ 10V
Max Input Capacitance: 2500pF @ 12V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.8 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
25V 100A MOSFET Transistor
2088-BSC018NE2LSI
25V 100A MOSFET Transistor 2088-BSC018NE2LSI
MOSFETs N-Ch 25V 100A TDSON-8 OptiMOS Product overview: BSC018NE2LSI from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 100A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-BSC018NE2LSI can be used for catalog matching and distributor lookup.

MOSFETs N-Ch 25V 100A TDSON-8 OptiMOS Product overview: BSC018NE2LSI from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 100A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-BSC018NE2LSI can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 25V 100A TDSON-8 OptiMOS

MOSFET N-Ch 25V 100A TDSON-8 OptiMOS

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 012121-BSC018NE2LSI 2088-BSC018NE2LSI BSC018NE2LSI
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC018NE2LSI 25V 100A MOSFET Transistor MOSFET
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 25 volts
PD 2500 to 69000 milliwatts 69 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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