Infineon Technologies AG Bipolar RF Transistors BFR 949T E6327

Description
RF Transistor NPN 10V 35mA 9GHz 250mW Surface Mount PG-SC-75
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Description
RF Transistor NPN 10V 35mA 9GHz 250mW Surface Mount PG-SC-75
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Datasheet
Datasheet Summary
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NPN silicon RF transistor for low-noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA, housed in an SC75 surface-mount package. It has a collector-emitter voltage rating of 10 V, a maximum collector current of 35 mA, and a total power dissipation of 250 mW. The transition frequency is 9 GHz at 15 mA and 6 V, with a noise figure of 1.0 dB at 1 GHz and 1.5 dB at 1.8 GHz. The device meets ESD sensitivity requirements and operates from -65 °C to 150 °C. Thermal resistance from junction to soldering point is 300 K/W.

Datasheet Summary
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NPN silicon RF transistor for low-noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA, housed in an SC75 surface-mount package. It has a collector-emitter voltage rating of 10 V, a maximum collector current of 35 mA, and a total power dissipation of 250 mW. The transition frequency is 9 GHz at 15 mA and 6 V, with a noise figure of 1.0 dB at 1 GHz and 1.5 dB at 1.8 GHz. The device meets ESD sensitivity requirements and operates from -65 °C to 150 °C. Thermal resistance from junction to soldering point is 300 K/W.

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Bipolar RF Transistors - BFR949TE6327-ND - DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
BFR949TE6327-ND
Bipolar RF Transistors BFR949TE6327-ND
RF Transistor NPN 10V 35mA 9GHz 250mW Surface Mount PG-SC-75

RF Transistor NPN 10V 35mA 9GHz 250mW Surface Mount PG-SC-75

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number BFR949TE6327-ND
Product Name Bipolar RF Transistors
Polarity NPN
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