BFY193F(P) is a high-reliability NPN silicon RF transistor for non-flight applications, sharing the same fit, form, and function as the space-qualified BFY193F(ES) variant. It is housed in a hermetically sealed Micro-X1 package and designed for low-noise, high-gain amplification up to 2 GHz, with a transition frequency of 8 GHz and a noise figure of 1.75 dB at 2 GHz. Maximum collector-emitter voltage is 12 V, collector current is 80 mA, and total power dissipation is 580 mW at 104 °C. The junction temperature rating is up to 200 °C. Thermal resistance from junction to soldering point is 165 K/W. It meets ESCC Detail Specification 5611/006 and is ESD sensitive.
HiRel Microwave Transistor
Summary of Features
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | BFY193F(P) |
| Product Name | RF - High Reliability Discrete - HiRel Silicon Bipolar Transistor - BFY193F(P) |
| Packing Method | WAFER SAWN |
