Infineon Technologies AG RF - High Reliability Discrete - HiRel Silicon Bipolar Transistor - BFY193F(P) BFY193F(P)

Description
HiRel Microwave Transistor Summary of Features For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers Specified 1/f Noise Hermetically sealed microwave package fT= 8GHz F = 1.75 dB at 2 GHz Applications Space applications
  • RF - High Reliability Discrete - HiRel Silicon Bipolar Transistor - BFY193F(P) - BFY193F(P) - Infineon Technologies AG
    Infineon Technologies AG
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Description
HiRel Microwave Transistor Summary of Features For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers Specified 1/f Noise Hermetically sealed microwave package fT= 8GHz F = 1.75 dB at 2 GHz Applications Space applications
Request a Quote Datasheet

Suppliers

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Supplier Links
RF - High Reliability Discrete - HiRel Silicon Bipolar Transistor - BFY193F(P) - BFY193F(P) - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
RF - High Reliability Discrete - HiRel Silicon Bipolar Transistor - BFY193F(P)
BFY193F(P)
RF - High Reliability Discrete - HiRel Silicon Bipolar Transistor - BFY193F(P) BFY193F(P)
HiRel Microwave Transistor Summary of Features For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers Specified 1/f Noise Hermetically sealed microwave package fT= 8GHz F = 1.75 dB at 2 GHz Applications Space applications

HiRel Microwave Transistor

Summary of Features

  • For low noise, high-gain amplifiers up to 2GHz
  • For linear broadband amplifiers
  • Specified 1/f Noise
  • Hermetically sealed microwave package
  • fT= 8GHz
    F = 1.75 dB at 2 GHz

Applications

  • Space applications
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Bipolar RF Transistors
Product Number BFY193F(P)
Product Name RF - High Reliability Discrete - HiRel Silicon Bipolar Transistor - BFY193F(P)
Packing Method WAFER SAWN
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