BSC028N06NS is an N-channel MOSFET in a PG-TDSON-8 package, designed for high-efficiency switching applications such as synchronous rectification in SMPS. It features a 60 V drain-source breakdown voltage, a maximum on-state resistance of 2.8 mΩ at 10 V gate drive, and a continuous drain current of 97 A at 100 °C case temperature. The device supports avalanche energy up to 100 mJ and operates at junction temperatures up to 175 °C. It is qualified to JEDEC industrial standards, meets RoHS requirements, and is halogen-free. The package dimensions are 5.35 mm maximum length, 6.10 mm maximum width, and 1.20 mm maximum height.
OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter.
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Manufacturer: Infineon Technologies
Win Source Part Number: 1154669-BSC028N06NS
Family Name: BSC028N06NS
Manufacturer Homepage: www.infineon.com
Alternative Parts (Cross-Reference): SiR182DP-T1-RE3; CSD18532NQ5B; CSD18532NQ5BT; CSD18532Q5BT;
Introduction Date: December 02, 2011
ECCN: EAR99
Country of Origin: China, Malaysia
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited
MOSFETs N-Ch 60V 100A TDSON-8 OptiMOS 3 Product overview: BSC028N06NS from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 100A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-BSC028N06NS can be used for catalog matching and distributor lookup.
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| Infineon Technologies AG | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | LCSC Electronics Technology (HK) Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BSC028N06NS | 1154669-BSC028N06NS | 2088-BSC028N06NS | 9064296P | 9064296 | BSC028N06NS | BSC028N06NS | BSC028N06NS |
| Product Name | N-Channel Power MOSFET | END - OF - LIFE - BSC028N06NS | 60V 100A MOSFET Transistor | MOSFETs | MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | Transistors | MOSFET |
| Polarity | N-Channel; N | N-Channel | N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | Si/SiC | |||||||
| rDS(on) | 0.0028 ohms | 0.0028 ohms | ||||||
| TJ | -55 to 175 C (-67 to 347 F) | |||||||
| Package Type | PG-TDSON-8 | SOT3 | Reel | TDSON | Tdson |
