MOSFET N-Ch 80V 100A 4m OptiMOS5 TDSON8
MOSFET N-Ch 80V 100A 4m OptiMOS5 TDSON8
MOSFET N-Ch 80V 100A 4m OptiMOS5 TDSON8
N-Channel 80V 100A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount PG-TDSON-8-7
N-Channel 80V 100A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount PG-TDSON-8-7
N-Channel 80V 100A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount PG-TDSON-8-7
MOSFET N-CH 80V 100A TDSON Product overview: BSC040N08NS5ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC040N08NS5ATMA
Manufacturer: Infineon Technologies
Win Source Part Number: 770403-BSC040N08NS5A
Series: OptiMOS
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-PowerTDFN
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Family Name: BSC040N08NS5
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Manufacturer Package: PG-TDSON-8
Channel Type Type: N
Drain Source Voltage: 80V
Vgs(th) (Maximum) @ Id: 3.8V @ 67μA
Gate Charge (Qg) (Maximum) @ Vgs: 54nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 3900pF @ 40V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 2.5W (Ta), 104W (Tc)
Rds On (Maximum) @ Id, Vgs: 4 mOhm @ 50A, 10V
Alternative Parts (Cross-Reference): NTMFS08N004C; FDWS86368-F085; FDMS004N08C; STL75N8LF6;
Introduction Date: December 27, 2014
ECCN: EAR99
Country of Origin: China, Malaysia
Estimated EOL Date: 2029
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited
MOSFET N-CH 80V 100A TDSON
MOSFET N-Ch 80V 100A TDSON-8
MOSFET, N-CH, 80V, 100A, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0034ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power DissipationRoHS Compliant: Yes
MOSFET N-CH 80V 100A TDSON
| RS Components, Ltd. | RS Components, Ltd. | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1711969P | 1702307 | BSC040N08NS5ATMA1DKR-ND | 278-BSC040N08NS5ATMA1 | 770403-BSC040N08NS5ATMA1 | BSC040N08NS5ATMA1 | BSC040N08NS5ATMA1 | 12AC9443 | BSC040N08NS5ATMA1 |
| Product Name | MOSFETs | MOSFETs | Single FETs, MOSFETs | 80V 100A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC040N08NS5ATMA1 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 80V, 100A, Tdson; Transistor Polarity Infineon | Single FETs, MOSFETs |
| Package Type | TDSON | Tdson | 8-PowerTDFN | Tape & Reel (TR) | SOT3 | 8-PowerTDFN | TO-3 | 8-PowerTDFN | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||||
| MOSFET Operating Mode | Enhancement | Enhancement | |||||||
| Number of units in IC | 1 | ||||||||
| V(BR)DSS | 80 volts | 80 volts |
