Infineon Technologies AG N-Channel Power MOSFET BSC014N04LSI

Description
New 40V and 60V product families, feature not only the industry’s lowest R DS(on) but also a perfect switching behavior for fast switching applications. 15% lower R DS(on) and 31% lower figure of merit (R DS(on) x Q g) compared to alternative devices has been realized by advanced thin wafer technology. Summary of Features Optimized for synchronous rectification 15% lower R DS(on) than alternative devices 31% improvement of FOM over similar devices Integrated Schottky-like diode RoHS compliant - halogen free MSL1 rated Benefits Highest system efficiency Less paralleling required Increased power density System cost reduction Very low voltage overshoot Potential Applications Synchronous rectification Solar micro inverter Isolated DC-DC converters Motor control Or-ing switches Applications 48 V intermediate bus converter (IBC) DIN rail power supplies Domain controller for ADAS and autonomous driving Medium voltage (MV) drive Solutions for inductive wireless charging above 50 W Designers who used this product also designed with TDA21520 | Integrated Smart Power Stages IPT60R028G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPB017N10N5LF | N-Channel Power MOSFET IRS10752L | Gate driver ICs TDA21535 | Integrated Smart Power Stages TDA21570 | Integrated Smart Power Stages TDA21520 | Integrated Smart Power Stages IPT60R028G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPB017N10N5LF | N-Channel Power MOSFET IRS10752L | Gate driver ICs TDA21535 | Integrated Smart Power Stages TDA21570 | Integrated Smart Power Stages TDA21520 | Integrated Smart Power Stages IPT60R028G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1 2
Request a Quote Datasheet
Description
New 40V and 60V product families, feature not only the industry’s lowest R DS(on) but also a perfect switching behavior for fast switching applications. 15% lower R DS(on) and 31% lower figure of merit (R DS(on) x Q g) compared to alternative devices has been realized by advanced thin wafer technology. Summary of Features Optimized for synchronous rectification 15% lower R DS(on) than alternative devices 31% improvement of FOM over similar devices Integrated Schottky-like diode RoHS compliant - halogen free MSL1 rated Benefits Highest system efficiency Less paralleling required Increased power density System cost reduction Very low voltage overshoot Potential Applications Synchronous rectification Solar micro inverter Isolated DC-DC converters Motor control Or-ing switches Applications 48 V intermediate bus converter (IBC) DIN rail power supplies Domain controller for ADAS and autonomous driving Medium voltage (MV) drive Solutions for inductive wireless charging above 50 W Designers who used this product also designed with TDA21520 | Integrated Smart Power Stages IPT60R028G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPB017N10N5LF | N-Channel Power MOSFET IRS10752L | Gate driver ICs TDA21535 | Integrated Smart Power Stages TDA21570 | Integrated Smart Power Stages TDA21520 | Integrated Smart Power Stages IPT60R028G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPB017N10N5LF | N-Channel Power MOSFET IRS10752L | Gate driver ICs TDA21535 | Integrated Smart Power Stages TDA21570 | Integrated Smart Power Stages TDA21520 | Integrated Smart Power Stages IPT60R028G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1 2
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
N-Channel Power MOSFET - BSC014N04LSI - Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
BSC014N04LSI
N-Channel Power MOSFET BSC014N04LSI
New 40V and 60V product families, feature not only the industry’s lowest R DS(on) but also a perfect switching behavior for fast switching applications. 15% lower R DS(on) and 31% lower figure of merit (R DS(on) x Q g) compared to alternative devices has been realized by advanced thin wafer technology. Summary of Features Optimized for synchronous rectification 15% lower R DS(on) than alternative devices 31% improvement of FOM over similar devices Integrated Schottky-like diode RoHS compliant - halogen free MSL1 rated Benefits Highest system efficiency Less paralleling required Increased power density System cost reduction Very low voltage overshoot Potential Applications Synchronous rectification Solar micro inverter Isolated DC-DC converters Motor control Or-ing switches Applications 48 V intermediate bus converter (IBC) DIN rail power supplies Domain controller for ADAS and autonomous driving Medium voltage (MV) drive Solutions for inductive wireless charging above 50 W Designers who used this product also designed with TDA21520 | Integrated Smart Power Stages IPT60R028G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPB017N10N5LF | N-Channel Power MOSFET IRS10752L | Gate driver ICs TDA21535 | Integrated Smart Power Stages TDA21570 | Integrated Smart Power Stages TDA21520 | Integrated Smart Power Stages IPT60R028G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPB017N10N5LF | N-Channel Power MOSFET IRS10752L | Gate driver ICs TDA21535 | Integrated Smart Power Stages TDA21570 | Integrated Smart Power Stages TDA21520 | Integrated Smart Power Stages IPT60R028G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1 2

New 40V and 60V product families, feature not only the industry’s lowest R DS(on) but also a perfect switching behavior for fast switching applications. 15% lower R DS(on) and 31% lower figure of merit (R DS(on) x Q g) compared to alternative devices has been realized by advanced thin wafer technology.


Summary of Features

  • Optimized for synchronous rectification
  • 15% lower R DS(on) than alternative devices
  • 31% improvement of FOM over similar devices
  • Integrated Schottky-like diode
  • RoHS compliant - halogen free
  • MSL1 rated

Benefits

  • Highest system efficiency
  • Less paralleling required
  • Increased power density
  • System cost reduction
  • Very low voltage overshoot

Potential Applications

  • Synchronous rectification
  • Solar micro inverter
  • Isolated DC-DC converters
  • Motor control
  • Or-ing switches

Applications

  • 48 V intermediate bus converter (IBC)
  • DIN rail power supplies
  • Domain controller for ADAS and autonomous driving
  • Medium voltage (MV) drive
  • Solutions for inductive wireless charging above 50 W

Designers who used this product also designed with


  • TDA21520 |
    Integrated Smart Power Stages
  • IPT60R028G7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPB017N10N5LF |
    N-Channel Power MOSFET
  • IRS10752L |
    Gate driver ICs
  • TDA21535 |
    Integrated Smart Power Stages
  • TDA21570 |
    Integrated Smart Power Stages
  • TDA21520 |
    Integrated Smart Power Stages
  • IPT60R028G7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPB017N10N5LF |
    N-Channel Power MOSFET
  • IRS10752L |
    Gate driver ICs
  • TDA21535 |
    Integrated Smart Power Stages
  • TDA21570 |
    Integrated Smart Power Stages
  • TDA21520 |
    Integrated Smart Power Stages
  • IPT60R028G7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET

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Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC014N04LSI - 091543-BSC014N04LSI - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC014N04LSI
091543-BSC014N04LSI
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC014N04LSI 091543-BSC014N04LSI
Manufacturer: Infineon Technologies Win Source Part Number: 091543-BSC014N04LSI Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 96W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TDSON-8 FL Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 31A (Ta), 100A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 55nC @ 10V Max Input Capacitance: 4000pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.45 mOhm @ 50A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 091543-BSC014N04LSI
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TDSON-8 FL
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 31A (Ta), 100A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 55nC @ 10V
Max Input Capacitance: 4000pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.45 mOhm @ 50A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Transistors - BSC014N04LSI - ODG (Origin Data Global)
Shenzhen, China
Transistors
BSC014N04LSI
Transistors BSC014N04LSI
MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS

MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS

Supplier's Site Datasheet
Singapore
40V 31A MOSFET Transistor
278-BSC014N04LSI
40V 31A MOSFET Transistor 278-BSC014N04LSI
Trans MOSFET N-CH 40V 31A 8-Pin TDSON EP T/R Product overview: BSC014N04LSI from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 31A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 31A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC014N04LSI can be used for catalog matching and distributor lookup.

Trans MOSFET N-CH 40V 31A 8-Pin TDSON EP T/R Product overview: BSC014N04LSI from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 31A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 31A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC014N04LSI can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS

MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS

Buy Now Datasheet

Technical Specifications

  Infineon Technologies AG Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number BSC014N04LSI 091543-BSC014N04LSI BSC014N04LSI 278-BSC014N04LSI BSC014N04LSI
Product Name N-Channel Power MOSFET TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC014N04LSI Transistors 40V 31A MOSFET Transistor MOSFET
Polarity N-Channel; N N-Channel; N-Channel N-Channel
Transistor Technology / Material Si/SiC
rDS(on) 0.0014 ohms
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 C (-67 F)
Package Type PG-TDSON-8 SOT3; PG-TDSON-8 FL Reel
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