Infineon Technologies AG N-Channel Power MOSFET BSC034N10LS5

Designers who used this product also designed with BSS123N | Small signal/small power MOSFET BSZ086P03NS3 G | P-Channel Power MOSFET BSS123N | Small signal/small power MOSFET BSZ086P03NS3 G | P-Channel Power MOSFET BSS123N | Small signal/small power MOSFET BSZ086P03NS3 G | P-Channel Power MOSFET OptiMOS™ 5 power MOSFETs in logic level provide low RDS(on) in a small package OptiMOS™ 5 power MOSFETs in logic level are highly suitable for charging, adapter and telecom applications. The device's low gate charge reduces switching losses without compromising conduction losses. Logic level MOSFETs allow operations at high switching frequencies and due to a low gate threshold voltage can be driven directly from microcontrollers. Summary of Features Low RDS(on) in small package Low gate charge Lower output charge Logic level compatibility Benefits Higher power density designs Higher switching frequency Reduced parts count wherever 5V supplies are available Driven directly from microcontrollers (slow switching) System cost reduction Potential Applications Charger Adapter Telecom Applications 48 V intermediate bus converter (IBC) Adapters and chargers Automotive USB power delivery - Head unit Domestic robots Light electric vehicles (LEV)

TDSON-8-EP(5x6) MOSFETs ROHS