The BSC034N10LS5 is an N-channel MOSFET designed for high-performance switching applications such as synchronous rectifiers in SMPS. It is packaged in a PG-TDSON-8 case with dimensions of 5.35 mm maximum length, 6.10 mm maximum width, and 1.20 mm maximum height. The device has a drain-source breakdown voltage of 100 V, a maximum on-state resistance of 3.4 mΩ at 25 °C, and a continuous drain current rating of 156 A at 25 °C case temperature. It features a logic-level gate threshold voltage, is 100% avalanche tested, and meets RoHS and halogen-free requirements per IEC 61249-2-21. It is fully qualified according to JEDEC for industrial applications.
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OptiMOS™ 5 power MOSFETs in logic level provide low RDS(on) in a small package
OptiMOS™ 5 power MOSFETs in logic level are highly suitable for charging, adapter and telecom applications. The device's low gate charge reduces switching losses without compromising conduction losses. Logic level MOSFETs allow operations at high switching frequencies and due to a low gate threshold voltage can be driven directly from microcontrollers.
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| Infineon Technologies AG | ODG (Origin Data Global) | |
|---|---|---|
| Product Category | Power MOSFET | Transistors |
| Product Number | BSC034N10LS5 | BSC034N10LS5 |
| Product Name | N-Channel Power MOSFET | Transistors |
| Polarity | N-Channel; N | |
| Transistor Technology / Material | Si/SiC | |
| rDS(on) | 0.0034 ohms |
