Infineon Technologies AG N-Channel Power MOSFET BSC012N06NS

Description
OptiMOS™ power MOSFETs in SuperSO8 package Infineon's OptiMOS™ MOSFETs in SuperSO8 package extend OptiMOS™ 3 and 5 product portfolio and enable higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance. Low reverse recovery charge (Qrr) improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the need for snubber circuits, resulting in less engineering cost and effort. Summary of Features Lowest RDS(on) enables highest power density and efficiency Higher operating temperature rating to 175°C for increased reliability Low RthJC for excellent thermal behavior Lower reverse recovery charge (Qrr) Benefits Lower full load temperature Less paralleling Reduced overshoot Increased system power density Smaller size System cost reduction Engineering costs and effort reduction Potential Applications Server Telecom Power tools Low voltage drives Class D audio applications Applications 48 V intermediate bus converter (IBC) Cordless power tools and outdoor power equipment Multicopters and drones Power conversion Telecommunication infrastructure Designers who used this product also designed with IPT60R125CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1EDB7275F | Gate driver ICs 2EDN7534B | Gate driver ICs 6ED2742S01Q | Gate driver ICs BSC093N15NS5 | N-Channel Power MOSFET BSZ900N20NS3 G | N-Channel Power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPT60R028G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSS138W | Small signal/small power MOSFET BSC004NE2LS5 | N-Channel Power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant 2EDN7524G | Gate driver ICs 1EDN7511B | Gate driver ICs IMBG65R057M1H | Silicon Carbide MOSFET Discretes IPW65R019C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 6EDL7141 | MOTIX™ | Battery Supplied BLDC Motor Controller ICs IMBG65R022M1H | Silicon Carbide MOSFET Discretes BSZ097N10NS5 | N-Channel Power MOSFET IDL08G65C5 | CoolSiC™ Schottky Diodes BSC074N15NS5 | N-Channel Power MOSFET IPT60R125CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1EDB7275F | Gate driver ICs 2EDN7534B | Gate driver ICs 6ED2742S01Q | Gate driver ICs BSC093N15NS5 | N-Channel Power MOSFET BSZ900N20NS3 G | N-Channel Power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPT60R028G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1 2 3 4 5
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Description
OptiMOS™ power MOSFETs in SuperSO8 package Infineon's OptiMOS™ MOSFETs in SuperSO8 package extend OptiMOS™ 3 and 5 product portfolio and enable higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance. Low reverse recovery charge (Qrr) improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the need for snubber circuits, resulting in less engineering cost and effort. Summary of Features Lowest RDS(on) enables highest power density and efficiency Higher operating temperature rating to 175°C for increased reliability Low RthJC for excellent thermal behavior Lower reverse recovery charge (Qrr) Benefits Lower full load temperature Less paralleling Reduced overshoot Increased system power density Smaller size System cost reduction Engineering costs and effort reduction Potential Applications Server Telecom Power tools Low voltage drives Class D audio applications Applications 48 V intermediate bus converter (IBC) Cordless power tools and outdoor power equipment Multicopters and drones Power conversion Telecommunication infrastructure Designers who used this product also designed with IPT60R125CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1EDB7275F | Gate driver ICs 2EDN7534B | Gate driver ICs 6ED2742S01Q | Gate driver ICs BSC093N15NS5 | N-Channel Power MOSFET BSZ900N20NS3 G | N-Channel Power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPT60R028G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSS138W | Small signal/small power MOSFET BSC004NE2LS5 | N-Channel Power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant 2EDN7524G | Gate driver ICs 1EDN7511B | Gate driver ICs IMBG65R057M1H | Silicon Carbide MOSFET Discretes IPW65R019C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 6EDL7141 | MOTIX™ | Battery Supplied BLDC Motor Controller ICs IMBG65R022M1H | Silicon Carbide MOSFET Discretes BSZ097N10NS5 | N-Channel Power MOSFET IDL08G65C5 | CoolSiC™ Schottky Diodes BSC074N15NS5 | N-Channel Power MOSFET IPT60R125CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1EDB7275F | Gate driver ICs 2EDN7534B | Gate driver ICs 6ED2742S01Q | Gate driver ICs BSC093N15NS5 | N-Channel Power MOSFET BSZ900N20NS3 G | N-Channel Power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPT60R028G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1 2 3 4 5
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Suppliers

Company
Product
Description
Supplier Links
N-Channel Power MOSFET - BSC012N06NS - Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
BSC012N06NS
N-Channel Power MOSFET BSC012N06NS
OptiMOS™ power MOSFETs in SuperSO8 package Infineon's OptiMOS™ MOSFETs in SuperSO8 package extend OptiMOS™ 3 and 5 product portfolio and enable higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance. Low reverse recovery charge (Qrr) improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the need for snubber circuits, resulting in less engineering cost and effort. Summary of Features Lowest RDS(on) enables highest power density and efficiency Higher operating temperature rating to 175°C for increased reliability Low RthJC for excellent thermal behavior Lower reverse recovery charge (Qrr) Benefits Lower full load temperature Less paralleling Reduced overshoot Increased system power density Smaller size System cost reduction Engineering costs and effort reduction Potential Applications Server Telecom Power tools Low voltage drives Class D audio applications Applications 48 V intermediate bus converter (IBC) Cordless power tools and outdoor power equipment Multicopters and drones Power conversion Telecommunication infrastructure Designers who used this product also designed with IPT60R125CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1EDB7275F | Gate driver ICs 2EDN7534B | Gate driver ICs 6ED2742S01Q | Gate driver ICs BSC093N15NS5 | N-Channel Power MOSFET BSZ900N20NS3 G | N-Channel Power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPT60R028G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSS138W | Small signal/small power MOSFET BSC004NE2LS5 | N-Channel Power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant 2EDN7524G | Gate driver ICs 1EDN7511B | Gate driver ICs IMBG65R057M1H | Silicon Carbide MOSFET Discretes IPW65R019C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 6EDL7141 | MOTIX™ | Battery Supplied BLDC Motor Controller ICs IMBG65R022M1H | Silicon Carbide MOSFET Discretes BSZ097N10NS5 | N-Channel Power MOSFET IDL08G65C5 | CoolSiC™ Schottky Diodes BSC074N15NS5 | N-Channel Power MOSFET IPT60R125CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1EDB7275F | Gate driver ICs 2EDN7534B | Gate driver ICs 6ED2742S01Q | Gate driver ICs BSC093N15NS5 | N-Channel Power MOSFET BSZ900N20NS3 G | N-Channel Power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPT60R028G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1 2 3 4 5

OptiMOS™ power MOSFETs in SuperSO8 package

Infineon's OptiMOS™ MOSFETs in SuperSO8 package extend OptiMOS™ 3 and 5 product portfolio and enable higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance.

Low reverse recovery charge (Qrr) improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the need for snubber circuits, resulting in less engineering cost and effort.


Summary of Features

  • Lowest RDS(on) enables highest power density and efficiency
  • Higher operating temperature rating to 175°C for increased reliability
  • Low RthJC for excellent thermal behavior
  • Lower reverse recovery charge (Qrr)

Benefits

  • Lower full load temperature
  • Less paralleling
  • Reduced overshoot
  • Increased system power density
  • Smaller size
  • System cost reduction
  • Engineering costs and effort reduction

Potential Applications

  • Server
  • Telecom
  • Power tools
  • Low voltage drives
  • Class D audio applications

Applications

  • 48 V intermediate bus converter (IBC)
  • Cordless power tools and outdoor power equipment
  • Multicopters and drones
  • Power conversion
  • Telecommunication infrastructure

Designers who used this product also designed with


  • IPT60R125CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • 1EDB7275F |
    Gate driver ICs
  • 2EDN7534B |
    Gate driver ICs
  • 6ED2742S01Q |
    Gate driver ICs
  • BSC093N15NS5 |
    N-Channel Power MOSFET
  • BSZ900N20NS3 G |
    N-Channel Power MOSFET
  • IPT60R022S7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPT60R028G7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • BSS138W |
    Small signal/small power MOSFET
  • BSC004NE2LS5 |
    N-Channel Power MOSFET
  • ICE2QR2280G-1 |
    CoolSET™ Quasi Resonant
  • 2EDN7524G |
    Gate driver ICs
  • 1EDN7511B |
    Gate driver ICs
  • IMBG65R057M1H |
    Silicon Carbide MOSFET Discretes
  • IPW65R019C7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • 6EDL7141 |
    MOTIX™ | Battery Supplied BLDC Motor Controller ICs
  • IMBG65R022M1H |
    Silicon Carbide MOSFET Discretes
  • BSZ097N10NS5 |
    N-Channel Power MOSFET
  • IDL08G65C5 |
    CoolSiC™ Schottky Diodes
  • BSC074N15NS5 |
    N-Channel Power MOSFET
  • IPT60R125CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • 1EDB7275F |
    Gate driver ICs
  • 2EDN7534B |
    Gate driver ICs
  • 6ED2742S01Q |
    Gate driver ICs
  • BSC093N15NS5 |
    N-Channel Power MOSFET
  • BSZ900N20NS3 G |
    N-Channel Power MOSFET
  • IPT60R022S7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPT60R028G7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number BSC012N06NS
Product Name N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0012 ohms
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