OptiMOS™ power MOSFETs in SuperSO8 package
Infineon's OptiMOS™ MOSFETs in SuperSO8 package extend OptiMOS™ 3 and 5 product portfolio and enable higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance.
Low reverse recovery charge (Qrr) improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the need for snubber circuits, resulting in less engineering cost and effort.
Summary of Features
Lowest RDS(on) enables highest power density and efficiency
Higher operating temperature rating to 175°C for increased reliability
Low RthJC for excellent thermal behavior
Lower reverse recovery charge (Qrr)
Benefits
Lower full load temperature
Less paralleling
Reduced overshoot
Increased system power density
Smaller size
System cost reduction
Engineering costs and effort reduction
Potential Applications
Server
Telecom
Power tools
Low voltage drives
Class D audio applications
Applications
48 V intermediate bus converter (IBC)
Cordless power tools and outdoor power equipment
Multicopters and drones
Power conversion
Telecommunication infrastructure
Designers who used this product also designed with
IPT60R125CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
1EDB7275F | Gate driver ICs
2EDN7534B | Gate driver ICs
6ED2742S01Q | Gate driver ICs
BSC093N15NS5 | N-Channel Power MOSFET
BSZ900N20NS3 G | N-Channel Power MOSFET
IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
IPT60R028G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
BSS138W | Small signal/small power MOSFET
BSC004NE2LS5 | N-Channel Power MOSFET
ICE2QR2280G-1 | CoolSET™ Quasi Resonant
2EDN7524G | Gate driver ICs
1EDN7511B | Gate driver ICs
IMBG65R057M1H | Silicon Carbide MOSFET Discretes
IPW65R019C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
6EDL7141 | MOTIX™ | Battery Supplied BLDC Motor Controller ICs
IMBG65R022M1H | Silicon Carbide MOSFET Discretes
BSZ097N10NS5 | N-Channel Power MOSFET
IDL08G65C5 | CoolSiC™ Schottky Diodes
BSC074N15NS5 | N-Channel Power MOSFET
IPT60R125CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
1EDB7275F | Gate driver ICs
2EDN7534B | Gate driver ICs
6ED2742S01Q | Gate driver ICs
BSC093N15NS5 | N-Channel Power MOSFET
BSZ900N20NS3 G | N-Channel Power MOSFET
IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
IPT60R028G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
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OptiMOS™ power MOSFETs in SuperSO8 package
Infineon's OptiMOS™ MOSFETs in SuperSO8 package extend OptiMOS™ 3 and 5 product portfolio and enable higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance.
Low reverse recovery charge (Qrr) improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the need for snubber circuits, resulting in less engineering cost and effort.
Summary of Features
- Lowest RDS(on) enables highest power density and efficiency
- Higher operating temperature rating to 175°C for increased reliability
- Low RthJC for excellent thermal behavior
- Lower reverse recovery charge (Qrr)
Benefits
- Lower full load temperature
- Less paralleling
- Reduced overshoot
- Increased system power density
- Smaller size
- System cost reduction
- Engineering costs and effort reduction
Potential Applications
- Server
- Telecom
- Power tools
- Low voltage drives
- Class D audio applications
Applications
- 48 V intermediate bus converter (IBC)
- Cordless power tools and outdoor power equipment
- Multicopters and drones
- Power conversion
- Telecommunication infrastructure
Designers who used this product also designed with
- IPT60R125CFD7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- 1EDB7275F |
Gate driver ICs
- 2EDN7534B |
Gate driver ICs
- 6ED2742S01Q |
Gate driver ICs
- BSC093N15NS5 |
N-Channel Power MOSFET
- BSZ900N20NS3 G |
N-Channel Power MOSFET
- IPT60R022S7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IPT60R028G7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- BSS138W |
Small signal/small power MOSFET
- BSC004NE2LS5 |
N-Channel Power MOSFET
- ICE2QR2280G-1 |
CoolSET™ Quasi Resonant
- 2EDN7524G |
Gate driver ICs
- 1EDN7511B |
Gate driver ICs
- IMBG65R057M1H |
Silicon Carbide MOSFET Discretes
- IPW65R019C7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- 6EDL7141 |
MOTIX™ | Battery Supplied BLDC Motor Controller ICs
- IMBG65R022M1H |
Silicon Carbide MOSFET Discretes
- BSZ097N10NS5 |
N-Channel Power MOSFET
- IDL08G65C5 |
CoolSiC™ Schottky Diodes
- BSC074N15NS5 |
N-Channel Power MOSFET
- IPT60R125CFD7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- 1EDB7275F |
Gate driver ICs
- 2EDN7534B |
Gate driver ICs
- 6ED2742S01Q |
Gate driver ICs
- BSC093N15NS5 |
N-Channel Power MOSFET
- BSZ900N20NS3 G |
N-Channel Power MOSFET
- IPT60R022S7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IPT60R028G7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
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