Infineon Technologies AG N-Channel Power MOSFET BSC021N08NS5

Description
OptiMOS™ power MOSFETs in SuperSO8 package Infineon's OptiMOS™ MOSFETs in SuperSO8 package extend OptiMOS™ 3 and 5 product portfolio and enable higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance. Low reverse recovery charge (Qrr) improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the need for snubber circuits, resulting in less engineering cost and effort. Applications 48 V intermediate bus converter (IBC) DIN rail power supplies Edge computing Telecommunication infrastructure Key features Lowest RDS(on) enables highest power density and efficiency Higher operating temperature rating to 175°C for increased reliability Low RthJC for excellent thermal behavior Lower reverse recovery charge (Qrr) Key benefits Lower full load temperature Less paralleling Reduced overshoot Increased system power density Smaller size System cost reduction Engineering costs and effort reduction Target applications Server Telecom Power tools Low voltage drives Class D audio applications Designers who used this product also designed with 2EDL8033G4B | Gate driver ICs 6ED2742S01Q | Gate driver ICs IRS21271S | Gate driver ICs IRS4427S | Gate driver ICs IPN95R1K2P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R040CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET XDPS2201 | Hybrid Flyback ICs IPT60R045CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPDD60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPP60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IDH12G65C5 | CoolSiC™ Schottky Diodes IPDD60R045CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IRLML2803 | N-Channel Power MOSFET IPDQ60R010S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1EDI60N12AF | Gate driver ICs 2ED2110S06M | Gate driver ICs 1ED44173N01B | Gate driver ICs 2EDN7534B | Gate driver ICs IRS10752L | Gate driver ICs 1EDN7550B | Gate driver ICs 2EDL8033G4B | Gate driver ICs 6ED2742S01Q | Gate driver ICs IRS21271S | Gate driver ICs IRS4427S | Gate driver ICs IPN95R1K2P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R040CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET XDPS2201 | Hybrid Flyback ICs IPT60R045CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1 2 3 4 5
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Description
OptiMOS™ power MOSFETs in SuperSO8 package Infineon's OptiMOS™ MOSFETs in SuperSO8 package extend OptiMOS™ 3 and 5 product portfolio and enable higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance. Low reverse recovery charge (Qrr) improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the need for snubber circuits, resulting in less engineering cost and effort. Applications 48 V intermediate bus converter (IBC) DIN rail power supplies Edge computing Telecommunication infrastructure Key features Lowest RDS(on) enables highest power density and efficiency Higher operating temperature rating to 175°C for increased reliability Low RthJC for excellent thermal behavior Lower reverse recovery charge (Qrr) Key benefits Lower full load temperature Less paralleling Reduced overshoot Increased system power density Smaller size System cost reduction Engineering costs and effort reduction Target applications Server Telecom Power tools Low voltage drives Class D audio applications Designers who used this product also designed with 2EDL8033G4B | Gate driver ICs 6ED2742S01Q | Gate driver ICs IRS21271S | Gate driver ICs IRS4427S | Gate driver ICs IPN95R1K2P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R040CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET XDPS2201 | Hybrid Flyback ICs IPT60R045CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPDD60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPP60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IDH12G65C5 | CoolSiC™ Schottky Diodes IPDD60R045CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IRLML2803 | N-Channel Power MOSFET IPDQ60R010S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1EDI60N12AF | Gate driver ICs 2ED2110S06M | Gate driver ICs 1ED44173N01B | Gate driver ICs 2EDN7534B | Gate driver ICs IRS10752L | Gate driver ICs 1EDN7550B | Gate driver ICs 2EDL8033G4B | Gate driver ICs 6ED2742S01Q | Gate driver ICs IRS21271S | Gate driver ICs IRS4427S | Gate driver ICs IPN95R1K2P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R040CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET XDPS2201 | Hybrid Flyback ICs IPT60R045CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1 2 3 4 5
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Suppliers

Company
Product
Description
Supplier Links
N-Channel Power MOSFET - BSC021N08NS5 - Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
BSC021N08NS5
N-Channel Power MOSFET BSC021N08NS5
OptiMOS™ power MOSFETs in SuperSO8 package Infineon's OptiMOS™ MOSFETs in SuperSO8 package extend OptiMOS™ 3 and 5 product portfolio and enable higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance. Low reverse recovery charge (Qrr) improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the need for snubber circuits, resulting in less engineering cost and effort. Applications 48 V intermediate bus converter (IBC) DIN rail power supplies Edge computing Telecommunication infrastructure Key features Lowest RDS(on) enables highest power density and efficiency Higher operating temperature rating to 175°C for increased reliability Low RthJC for excellent thermal behavior Lower reverse recovery charge (Qrr) Key benefits Lower full load temperature Less paralleling Reduced overshoot Increased system power density Smaller size System cost reduction Engineering costs and effort reduction Target applications Server Telecom Power tools Low voltage drives Class D audio applications Designers who used this product also designed with 2EDL8033G4B | Gate driver ICs 6ED2742S01Q | Gate driver ICs IRS21271S | Gate driver ICs IRS4427S | Gate driver ICs IPN95R1K2P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R040CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET XDPS2201 | Hybrid Flyback ICs IPT60R045CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPDD60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPP60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IDH12G65C5 | CoolSiC™ Schottky Diodes IPDD60R045CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IRLML2803 | N-Channel Power MOSFET IPDQ60R010S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1EDI60N12AF | Gate driver ICs 2ED2110S06M | Gate driver ICs 1ED44173N01B | Gate driver ICs 2EDN7534B | Gate driver ICs IRS10752L | Gate driver ICs 1EDN7550B | Gate driver ICs 2EDL8033G4B | Gate driver ICs 6ED2742S01Q | Gate driver ICs IRS21271S | Gate driver ICs IRS4427S | Gate driver ICs IPN95R1K2P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R040CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET XDPS2201 | Hybrid Flyback ICs IPT60R045CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1 2 3 4 5

OptiMOS™ power MOSFETs in SuperSO8 package

Infineon's OptiMOS™ MOSFETs in SuperSO8 package extend OptiMOS™ 3 and 5 product portfolio and enable higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance.

Low reverse recovery charge (Qrr) improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the need for snubber circuits, resulting in less engineering cost and effort.


Applications

  • 48 V intermediate bus converter (IBC)
  • DIN rail power supplies
  • Edge computing
  • Telecommunication infrastructure

Key features

  • Lowest RDS(on) enables highest power density and efficiency
  • Higher operating temperature rating to 175°C for increased reliability
  • Low RthJC for excellent thermal behavior
  • Lower reverse recovery charge (Qrr)

Key benefits

  • Lower full load temperature
  • Less paralleling
  • Reduced overshoot
  • Increased system power density
  • Smaller size
  • System cost reduction
  • Engineering costs and effort reduction

Target applications

  • Server
  • Telecom
  • Power tools
  • Low voltage drives
  • Class D audio applications

Designers who used this product also designed with


  • 2EDL8033G4B |
    Gate driver ICs
  • 6ED2742S01Q |
    Gate driver ICs
  • IRS21271S |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs
  • IPN95R1K2P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPW60R040CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • XDPS2201 |
    Hybrid Flyback ICs
  • IPT60R045CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPDD60R050G7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPP60R060P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IDH12G65C5 |
    CoolSiC™ Schottky Diodes
  • IPDD60R045CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IRLML2803 |
    N-Channel Power MOSFET
  • IPDQ60R010S7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • 1EDI60N12AF |
    Gate driver ICs
  • 2ED2110S06M |
    Gate driver ICs
  • 1ED44173N01B |
    Gate driver ICs
  • 2EDN7534B |
    Gate driver ICs
  • IRS10752L |
    Gate driver ICs
  • 1EDN7550B |
    Gate driver ICs
  • 2EDL8033G4B |
    Gate driver ICs
  • 6ED2742S01Q |
    Gate driver ICs
  • IRS21271S |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs
  • IPN95R1K2P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPW60R040CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • XDPS2201 |
    Hybrid Flyback ICs
  • IPT60R045CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET

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Supplier's Site Datasheet
Transistors - BSC021N08NS5 - ODG (Origin Data Global)
Shenzhen, China
Transistors
BSC021N08NS5
Transistors BSC021N08NS5
TSON-8-EP(5x6) MOSFETs ROHS

TSON-8-EP(5x6) MOSFETs ROHS

Supplier's Site

Technical Specifications

  Infineon Technologies AG ODG (Origin Data Global)
Product Category Power MOSFET Transistors
Product Number BSC021N08NS5 BSC021N08NS5
Product Name N-Channel Power MOSFET Transistors
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0021 ohms
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