OptiMOS™ power MOSFETs in SuperSO8 package
Infineon's OptiMOS™ MOSFETs in SuperSO8 package extend OptiMOS™ 3 and 5 product portfolio and enable higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance.
Low reverse recovery charge (Qrr) improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the need for snubber circuits, resulting in less engineering cost and effort.
Applications
48 V intermediate bus converter (IBC)
DIN rail power supplies
Edge computing
Telecommunication infrastructure
Key features
Lowest RDS(on) enables highest power density and efficiency
Higher operating temperature rating to 175°C for increased reliability
Low RthJC for excellent thermal behavior
Lower reverse recovery charge (Qrr)
Key benefits
Lower full load temperature
Less paralleling
Reduced overshoot
Increased system power density
Smaller size
System cost reduction
Engineering costs and effort reduction
Target applications
Server
Telecom
Power tools
Low voltage drives
Class D audio applications
Designers who used this product also designed with
2EDL8033G4B | Gate driver ICs
6ED2742S01Q | Gate driver ICs
IRS21271S | Gate driver ICs
IRS4427S | Gate driver ICs
IPN95R1K2P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
IPW60R040CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
XDPS2201 | Hybrid Flyback ICs
IPT60R045CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
IPDD60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
IPP60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
IDH12G65C5 | CoolSiC™ Schottky Diodes
IPDD60R045CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
IRLML2803 | N-Channel Power MOSFET
IPDQ60R010S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
1EDI60N12AF | Gate driver ICs
2ED2110S06M | Gate driver ICs
1ED44173N01B | Gate driver ICs
2EDN7534B | Gate driver ICs
IRS10752L | Gate driver ICs
1EDN7550B | Gate driver ICs
2EDL8033G4B | Gate driver ICs
6ED2742S01Q | Gate driver ICs
IRS21271S | Gate driver ICs
IRS4427S | Gate driver ICs
IPN95R1K2P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
IPW60R040CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
XDPS2201 | Hybrid Flyback ICs
IPT60R045CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
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OptiMOS™ power MOSFETs in SuperSO8 package
Infineon's OptiMOS™ MOSFETs in SuperSO8 package extend OptiMOS™ 3 and 5 product portfolio and enable higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance.
Low reverse recovery charge (Qrr) improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the need for snubber circuits, resulting in less engineering cost and effort.
Applications
- 48 V intermediate bus converter (IBC)
- DIN rail power supplies
- Edge computing
- Telecommunication infrastructure
Key features
- Lowest RDS(on) enables highest power density and efficiency
- Higher operating temperature rating to 175°C for increased reliability
- Low RthJC for excellent thermal behavior
- Lower reverse recovery charge (Qrr)
Key benefits
- Lower full load temperature
- Less paralleling
- Reduced overshoot
- Increased system power density
- Smaller size
- System cost reduction
- Engineering costs and effort reduction
Target applications
- Server
- Telecom
- Power tools
- Low voltage drives
- Class D audio applications
Designers who used this product also designed with
- 2EDL8033G4B |
Gate driver ICs
- 6ED2742S01Q |
Gate driver ICs
- IRS21271S |
Gate driver ICs
- IRS4427S |
Gate driver ICs
- IPN95R1K2P7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IPW60R040CFD7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- XDPS2201 |
Hybrid Flyback ICs
- IPT60R045CFD7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IPDD60R050G7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IPP60R060P7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IDH12G65C5 |
CoolSiC™ Schottky Diodes
- IPDD60R045CFD7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IRLML2803 |
N-Channel Power MOSFET
- IPDQ60R010S7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- 1EDI60N12AF |
Gate driver ICs
- 2ED2110S06M |
Gate driver ICs
- 1ED44173N01B |
Gate driver ICs
- 2EDN7534B |
Gate driver ICs
- IRS10752L |
Gate driver ICs
- 1EDN7550B |
Gate driver ICs
- 2EDL8033G4B |
Gate driver ICs
- 6ED2742S01Q |
Gate driver ICs
- IRS21271S |
Gate driver ICs
- IRS4427S |
Gate driver ICs
- IPN95R1K2P7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IPW60R040CFD7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- XDPS2201 |
Hybrid Flyback ICs
- IPT60R045CFD7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
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