Infineon Technologies AG Datasheets for Transistors
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
Transistors: Learn more
| Product Name | Notes |
|---|---|
| 2000 V, 60 A Boost EasyPACK™ 3B CoolSiC™ MOSFET Module EasyPACK™ 3B CoolSiC™ MOSFET 2000 V 60 A Boost module with PressFit PIN and NTC. Summary of Features Best in... | |
| 4500 V IHV, 400 A 130mm Diode IGBT module with EC3 - Diode, predestined to be combined with IGBT products (e.g. FZ1200R45KL3_B5 or FZ800R45KL3_B5) - The best solution for your... | |
| 4500 V IHV, 800 A 130mm Diode IGBT module with Emitter Controlled C3 Diode, predestined to be combined with IGBT products (e.g. FZ1200R45KL3_B5 or FZ800R45KL3_B5) - The best solution for... | |
| 62 mm 1700 V, 800 A Diode IGBT module with EC3. Summary of Features Superior solution for frequency controlled inverter drives UL/CSA Certification with UL1557 E83336 Operating temperature up to... | |
| 6500 V IHV 600 A 130mm diode IGBT module with EC3 - Diode - The best solution for your traction and industry applications. Predestined to be combined with IGBT3 products. | |
| 6500 V IHV, 500 A 130mm Diode IGBT module with EC3 - Diode - The best solution for your traction and industry applications. Predestined to be combined with IGBT3 products. | |
| 6500 V IHV, 750 A 130mm Diode IGBT module with EC3 - Diode - The best solution for your traction and industry applications. Predestined to be combined with IGBT3 products. | |
| Applications Space applications | |
| Applications Space applications Chip of BUY65CS28B-01 (ES) | |
| Booster 1200 V CoolSiC™ MOSFET Module EasyPACK™ 1B 1200 V, 33 mΩ and 2 MPPTs booster module with CoolSiC™ MOSFET enhanced generation 1, NTC and PressFIT Contact Technology Summary of... | |
| Booster 1200 V CoolSiC™ MOSFET Module EasyPACK™ 1B 1200 V, 33 mΩ and 3 MPPTs booster module with CoolSiC™ MOSFET enhanced generation 1, NTC and PressFIT Contact Technology. Summary of... | |
| Chip of BUY06CS35J-01 (ES) Applications Space applications | |
| Chip of BUY06CS80A-01 (ES) Applications Space applications | |
| Chip of BUY06CS80A-01 (P) | |
| Chip of BUY65CS028B-01 (P) | |
| Chip of BUY65CS08J-01 (ES) Applications Space applications | |
| Chip of BUY65CS08J-01 (P) | |
| Complementary power MOSFETs - an n-channel and a p-channel power MOSFET within the same package - are part of Infineon’s famous low voltage OptiMOS™ families, the market leader in high... | |
| EasyPACK™ 1B 1200 V, 16 mΩ and 2 MPPTs booster module with CoolSiC™ MOSFET enhanced generation 1 and PressFIT Contact Technology. Summary of Features Best-in-class packages with 12 mm height... | |
| EasyPACK™ 1B 1200 V, 33 mΩ and 1 MPPTs booster module with CoolSiC™ MOSFET enhanced generation 1, NTC and PressFIT Contact Technology. Summary of Features Easy family with 12mm height... | |
| EasyPACK™ 1B CoolSiC™ MOSFET 1200 V, 17 mΩ booster single MPPT module with enhanced generation 1, NTC and PressFIT Contact Technology. Summary of Features Best-in-class packages with 12 mm height... | |
| EasyPACK™ 650 V, 100 A booster IGBT module with TRENCHSTOP™ 5 H5, CoolSiC™ Schottky diode, PressFIT contact technology and pre-applied Thermal Interface Material. Summary of Features Increased blocking voltage capability... | |
| EasyPACK™ 650 V, 100 A booster IGBT module with TRENCHSTOP™ 5 H5, CoolSiC™ Schottky diode, solder pins contact technology and pre-applied Thermal Interface Material. Summary of Features Increased blocking voltage... | |
| EconoPACK™ 4 650 V three phase chopper IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode and NTC Summary of Features Increased blocking voltage capability to 650 V Extended Operation... | |
| Home // Products // RF // High Reliability Discrete // HiRel Radiation Hard PowerMOS Transistor // CHIP L5442A(P) | |
| Home // Products // RF // High Reliability Discrete // HiRel Radiation Hard PowerMOS Transistor // CHIP L5461A(P) | |
| Home // Products // RF // High Reliability Discrete // HiRel Radiation Hard PowerMOS Transistor // CHIP L5462A(P) | |
| Home // Products // RF // High Reliability Discrete // HiRel Radiation Hard PowerMOS Transistor // CHIP L5490 (P) | |
| Home // Products // RF // High Reliability Discrete // HiRel Radiation Hard PowerMOS Transistor // CHIP L5491A(P) | |
| IHV 4500 V, 1200 A 130 mm Diode Module with EC3 - Diode, predestined to be combined with IGBT products (e.g. FZ1200R45KL3_B5 or FZ800R45KL3_B5). Summary of Features High DC Stability... | |
| IHV B 3300 V, 1000 A 130 mm Diode Module with EC3 - Diode - The best solution for your traction and industry applications. Predestined to be combined with IGBT3... | |
| IHV B 3300 V, 1600 A 130 mm diode IGBT module with EC4 - Diode. The best solution for your transportation and industry applications and predestined to be combined with... | |
| IHV B 3300 V, 500 A 130 mm Diode Module with EC3 - Diode - The best solution for your traction and industry applications. Predestined to be combined with IGBT3... | |
| Industry leading power MOSFET technology for telecom and server applications with OptiMOS™ 5 80V in S3O8 package Infineon’s OptiMOS™ 5 80V industrial power MOSFET BSZ084N08NS5 offers a RDS(on) reduction... | |
| Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance... | |
| Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both... | |
| Infineon's 200 V OptiMOS™ products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48 V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor... | |
| Infineon's 250V OptiMOS™ products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives. Summary... | |
| OptiMOS™ 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used... | |
| OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are... | |
| OptiMOS™ 5 power MOSFET 100 V in a PQFN 3x3 package Infineon’s OptiMOS™ 5 industrial power MOSFET devices in 80 V and 100 V are designed for synchronous rectification in... | |
| OptiMOS™ 5 power MOSFET 80V for telecom applications OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can... | |
| OptiMOS™ 5 power MOSFETs logic level provide low RDS(on) in a small package Infineon's OptiMOS™ 5 power MOSFETs logic level are highly suitable for wireless charging, adapter and telecom... | |
| OptiMOS™ 60 V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these... | |
| OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). Summary of... | |
| OptiMOS™ low-voltage power MOSFETs - perfectly addressing the needs of charger and adapter designs Infineon’s OptiMOS™ PD power MOSFET portfolio is targeting USB-PD and adapter applications. The products offer fast... | |
| PrimePACK™3 1700 V , 1000 A chopper IGBT module with TRENCHSTOP™ IGBT4 and NTC. Also available with pre-applied Thermal Interface Material. Summary of Features Extended Operation Temperature Tvj op... | |
| Radiation Hard Power Switch 150V/23A Summary of Features N-channel Low RDS(on) Hermetically sealed Potential Applications DC/DC Converters Motorcontroller Switch Mode Power Supply Quality level for Engineering Models Applications Space... | |
| Radiation Hard Power Switch 150V/23A Summary of Features N-channel Low RDS(on) Single Event Effect (SEE) hardened LET 73, Range: 253μm VGS = -10V, VDS = 150V, approved; LET 55,... | |
| Radiation Hard Power Switch 150V/45A Summary of Features N-channel Low RDS(on) Hermetically sealed Potential Applications DC/DC Converters Motorcontroller Switch Mode Power Supply Quality level for Engineering Models Applications Space... | |
| Radiation Hard Power Switch 150V/45A Summary of Features N-channel Low RDS(on) Single Event Effect (SEE) hardened LET 73, Range: 253μm VGS = -10V, VDS = 150V, approved; LET 55,... | |
| Radiation Hard Power Switch 150V/57A Summary of Features N-channel Low RDS(on) Hermetically sealed Potential Applications DC/DC Converters Motorcontroller Switch Mode Power Supply Quality level for Engineering Models Applications Space... | |
| Radiation Hard Power Switch 150V/57A Summary of Features N-channel Low RDS(on) Single Event Effect (SEE) hardened LET 73, Range: 253μm VGS = -10V, VDS = 150V, approved; LET 55,... | |
| Radiation Hard Power Switch 250V/12A Summary of Features Low RDS(on) Single Event Effect (SEE) hardened LET 85, Range: 118μm VGS = -10V, VDS = 250V, approved LET 55; Range:... | |
| Radiation Hard Power Switch 250V/12A Summary of Features N-channel Low RDS(on) Hermetically sealed Potential Applications DC/DC Converters Motorcontroller Switch Mode Power Supply Quality level for Engineering Models Applications Space... | |
| Radiation Hard Power Switch 250V/12A Summary of Features N-channel Low RDS(on) Hermetically sealed Potential Applications DC/DC Converters Motorcontroller Switch Mode Power Supply Quality level for Engineering Models Applications Space... | |
| Radiation Hard Power Switch 250V/45A Summary of Features Low RDS(on) Single Event Effect (SEE) hardened LET 85, Range: 118μm VGS = -10V, VDS = 250V, approved LET 55; Range:... | |
| Radiation Hard Power Switch 250V/45A Summary of Features N-channel Low RDS(on) Hermetically sealed Potential Applications DC/DC Converters Motorcontroller Switch Mode Power Supply Quality level for Engineering Models Applications Space... | |
| Radiation Hard Power Switch 250V/54A Summary of Features Low RDS(on) Single Event Effect (SEE) hardened LET 85, Range: 118μm VGS = -10V, VDS = 250V, approved LET 55; Range:... | |
| Radiation Hard Power Switch 250V/54A Summary of Features N-channel Low RDS(on) Hermetically sealed Potential Applications DC/DC Converters Motorcontroller Switch Mode Power Supply Quality level for Engineering Models Applications Space... | |
| Radiation Hard Power Switch 60V/80A Summary of Features N-channel Low RDS(on) Hermetically sealed Potential Applications DC/DC converters Motorcontroller Switch mode power supply Point of load converter Quality level for... | |
| Radiation Hard Power Switch 60V/80A Summary of Features N-channel Low RDS(on) Single Event Effect (SEE) hardened LET 95, Range: 86μm (Pb) VGS = -10V, VDS = 55V, approved VGS... | |
| Radiation tolerant, 150V, 36A, N-channel MOSFET, PG-TO263, 30krad(Si)TID Features Optimized for LEO missions and constellations Radiation tolerant (LET of 46 MeV∙cm²/mg) Qualified for space applications according to AEC-Q101 standard Potential... | |
| Radiation tolerant, 150V, 98A, N-channel MOSFET, PG-TO247, 30krad(Si)TID Features Optimized for LEO missions and constellations Radiation tolerant (LET of 46 MeV∙cm²/mg) Qualified for space applications according to AEC-Q101 standard Potential... | |
| Radiation tolerant, 60V, 106A, N-channel MOSFET, PG-TO247, 30krad(Si) TID Summary of Features Optimized for LEO missions and constellations Radiation tolerant (LET of 46 MeV∙cm²/mg) Qualified according to AEC-Q101 standard Potential... | |
| Radiation tolerant, 60V, 52A, N-channel MOSFET, PG-TO263, 30krad(Si) TID Summary of Features Optimized for LEO missions and constellations Radiation tolerant (LET of 46 MeV∙cm²/mg) Qualified according to AEC-Q101 standard Potential... | |
| Summary of Features Optimized for LEO missions and constellations Radiation tolerant (LET of 46 MeV∙cm²/mg) Qualified for space applications according to AEC-Q101 standard Benefits Load switch Power conditioning unit Power... | |
| The 150 V OptiMOS™ achieves a reduction in RDS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens... | |
| Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in... | |
| XHP™ 3 4500 V, 450 A diode IGBT module with Emitter Controlled E4 Diode and enhanced isolation of 10.4 kV. Predestined to be combined with IGBT module FF450R45T3E4_B5 Summary of... |
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