MOSFET P-CH 30V 25.4/100A 8TDSON Product overview: BSC030P03NS3GAUMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC030P03NS3GAUM
Manufacturer: Infineon Technologies
Win Source Part Number: 864635-BSC030P03NS3G
Series: OptiMOS™
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: P-Channel 30 V 25.4A (Ta), 100A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount PG-TDSON-8-1
Package: 8-PowerTDFN
Package: Reel - TR
Mounting: Surface Mount
Family Name: BSC030
Categories: Discrete Semiconductor Products
Case / Package: PG-TDSON-8-1
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited
Quantity per package: 5000
MSL Level: 3 (168 Hours)
Estimated Pruduction Lead Time: 46 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: BSC030P03NS3GAUMA1TR
P-Channel 30V 25.4A (Ta), 100A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount PG-TDSON-8-1
P-Channel 30V 25.4A (Ta), 100A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount PG-TDSON-8-1
P-Channel 30V 25.4A (Ta), 100A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount PG-TDSON-8-1
MOSFET P-CH 30V 25.4/100A 8TDSON
MOSFET, P-CH, -30V, -100A, 125W; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes
MOSFET P-Ch -30V 25.4A TDSON-8 OptiMOS P3
MOSFET P-CH 30V 25.4/100A 8TDSON
30V 3mΩ@50A,10V 3.1V@345uA P Channel TDSON-8 MOSFETs ROHS
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-BSC030P03NS3GAUMA1 | 864635-BSC030P03NS3GAUMA1 | BSC030P03NS3GAUMA1CT-ND | BSC030P03NS3GAUMA1 | 85X4150 | BSC030P03NS3GAUMA1 | BSC030P03NS3GAUMA1 | BSC030P03NS3GAUMA1 |
| Product Name | 30V 100A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC030P03NS3GAUMA1 | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, P-Ch, -30V, -100A, 125W; Channel Type Infineon | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | |||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | |||||
| Transconductance | 0.0470 kS | |||||||
| PD | 125 milliwatts | 2500 milliwatts | 2500 milliwatts |
