HiRel Microwave Transistor
Summary of Features
HiRel Discrete and Microwave Semiconductor
For Medium Power Amplifiers
Compression Point P-1dB =19dBm 1.8 GHz
Max. Available Gain Gma = 16dB at 1.8 GHz
Hermetically sealed microwave package
Transition Frequency fT = 20 GHz
SIEGET® 25-Line Infineon Technologies Grounded Emitter Transistor-25 GHz fT-Line
Type Variant No. 03
Potential Applications
Quality level for Engineering Models
Applications
Space applications
HiRel Microwave Transistor
Summary of Features
- HiRel Discrete and Microwave Semiconductor
- For Medium Power Amplifiers
- Compression Point P-1dB =19dBm 1.8 GHz
- Max. Available Gain Gma = 16dB at 1.8 GHz
- Hermetically sealed microwave package
- Transition Frequency fT = 20 GHz
- SIEGET® 25-Line Infineon Technologies Grounded Emitter Transistor-25 GHz fT-Line
- Type Variant No. 03
Potential Applications
Quality level for Engineering Models
Applications
