Infineon Technologies AG HiRel Silicon Bipolar Transistor BFY450 (P)

Description
HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For Medium Power Amplifiers Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz Hermetically sealed microwave package Transition Frequency fT = 20 GHz SIEGET® 25-Line Infineon Technologies Grounded Emitter Transistor-25 GHz fT-Line Type Variant No. 03 Potential Applications Quality level for Engineering Models Applications Space applications
  • HiRel Silicon Bipolar Transistor - BFY450 (P) - Infineon Technologies AG
    Infineon Technologies AG
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Description
HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For Medium Power Amplifiers Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz Hermetically sealed microwave package Transition Frequency fT = 20 GHz SIEGET® 25-Line Infineon Technologies Grounded Emitter Transistor-25 GHz fT-Line Type Variant No. 03 Potential Applications Quality level for Engineering Models Applications Space applications
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Datasheet
Datasheet Summary
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BFY450(P) is a HiRel NPN silicon RF transistor for non-flight use, sharing the hermetically sealed Micro-X package and electrical characteristics of the BFY450(ES) series. It has a transition frequency of 20 GHz, a 1 dB compression point of 19 dBm at 1.8 GHz, and a maximum available gain of 16 dB at 1.8 GHz. Maximum collector-emitter voltage is 4.5 V, collector current is 100 mA, and total power dissipation is 450 mW at a case temperature of 110 °C. The junction and operating temperature range is from -65 °C to 175 °C.

Datasheet Summary
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BFY450(P) is a HiRel NPN silicon RF transistor for non-flight use, sharing the hermetically sealed Micro-X package and electrical characteristics of the BFY450(ES) series. It has a transition frequency of 20 GHz, a 1 dB compression point of 19 dBm at 1.8 GHz, and a maximum available gain of 16 dB at 1.8 GHz. Maximum collector-emitter voltage is 4.5 V, collector current is 100 mA, and total power dissipation is 450 mW at a case temperature of 110 °C. The junction and operating temperature range is from -65 °C to 175 °C.

Suppliers

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HiRel Silicon Bipolar Transistor - BFY450 (P) - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
HiRel Silicon Bipolar Transistor
BFY450 (P)
HiRel Silicon Bipolar Transistor BFY450 (P)
HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For Medium Power Amplifiers Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz Hermetically sealed microwave package Transition Frequency fT = 20 GHz SIEGET® 25-Line Infineon Technologies Grounded Emitter Transistor-25 GHz fT-Line Type Variant No. 03 Potential Applications Quality level for Engineering Models Applications Space applications

HiRel Microwave Transistor


Summary of Features

  • HiRel Discrete and Microwave Semiconductor
  • For Medium Power Amplifiers
  • Compression Point P-1dB =19dBm 1.8 GHz
  • Max. Available Gain Gma = 16dB at 1.8 GHz
  • Hermetically sealed microwave package
  • Transition Frequency fT = 20 GHz
  • SIEGET® 25-Line Infineon Technologies Grounded Emitter Transistor-25 GHz fT-Line
  • Type Variant No. 03

Potential Applications

Quality level for Engineering Models


Applications

  • Space applications
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Bipolar RF Transistors
Product Number BFY450 (P)
Product Name HiRel Silicon Bipolar Transistor
Package Type Micro-X
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