Infineon Technologies AG TRANSISTORS - RF Transistors (BJT) - BFS17S H6327 BFS17S H6327

Description
Manufacturer: Infineon Technologies Win Source Part Number: 039639-BFS17S H6327 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 1.4GHz Transistor Polarity: 2 NPN (Dual) Noise Figure (dB Typ @ f): 3dB to 5dB @ 800MHz Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT363-6 Maximum Current Collector: 25mA VCEO Maximum Collector-Emitter Breakdown Voltage: 15V Typical Gain (hFE) (Min): 40 @ 2mA, 1V Maximum Power Dissipation: 280mW Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 039639-BFS17S H6327 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 1.4GHz Transistor Polarity: 2 NPN (Dual) Noise Figure (dB Typ @ f): 3dB to 5dB @ 800MHz Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT363-6 Maximum Current Collector: 25mA VCEO Maximum Collector-Emitter Breakdown Voltage: 15V Typical Gain (hFE) (Min): 40 @ 2mA, 1V Maximum Power Dissipation: 280mW Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Limited
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TRANSISTORS - RF Transistors (BJT) - BFS17S H6327 - 039639-BFS17S H6327 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - BFS17S H6327
039639-BFS17S H6327
TRANSISTORS - RF Transistors (BJT) - BFS17S H6327 039639-BFS17S H6327
Manufacturer: Infineon Technologies Win Source Part Number: 039639-BFS17S H6327 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 1.4GHz Transistor Polarity: 2 NPN (Dual) Noise Figure (dB Typ @ f): 3dB to 5dB @ 800MHz Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT363-6 Maximum Current Collector: 25mA VCEO Maximum Collector-Emitter Breakdown Voltage: 15V Typical Gain (hFE) (Min): 40 @ 2mA, 1V Maximum Power Dissipation: 280mW Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 039639-BFS17S H6327
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 1.4GHz
Transistor Polarity: 2 NPN (Dual)
Noise Figure (dB Typ @ f): 3dB to 5dB @ 800MHz
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SOT363-6
Maximum Current Collector: 25mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 15V
Typical Gain (hFE) (Min): 40 @ 2mA, 1V
Maximum Power Dissipation: 280mW
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 039639-BFS17S H6327
Product Name TRANSISTORS - RF Transistors (BJT) - BFS17S H6327
Polarity NPN; 2 NPN (Dual)
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