Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSB012NE2LXIXUMA1 BSB012NE2LXIXUMA1

Manufacturer: Infineon Technologies
Win Source Part Number: 1024315-BSB012NE2LXIXUMA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: MG-WDSON-2, CanPAK M
Dimension: 3-WDSON
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 170A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 82nC @ 10V
Max Input Capacitance: 5852pF @ 12V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.2 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance

MOSFET N-CH 25V 170A 2WDSON Product overview: BSB012NE2LXIXUMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 170A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 170A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSB012NE2LXIXUMA1 can be used for catalog matching and distributor lookup.

N-Channel 25V 170A (Tc) 2.8W (Ta), 57W (Tc) Surface Mount MG-WDSON-2, CanPAK M™