Manufacturer: Infineon Technologies
Win Source Part Number: 1024315-BSB012NE2LXI
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: MG-WDSON-2, CanPAK M
Dimension: 3-WDSON
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 170A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 82nC @ 10V
Max Input Capacitance: 5852pF @ 12V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.2 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
N-Channel 25V 170A (Tc) 2.8W (Ta), 57W (Tc) Surface Mount MG-WDSON-2, CanPAK M™
MOSFET N-Ch 25V 170A CanPAK-3 MX OptiMOS
MOSFET N-CH 25V 170A 2WDSON
| Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1024315-BSB012NE2LXIXUMA1 | BSB012NE2LXIXUMA1-ND | BSB012NE2LXIXUMA1 | BSB012NE2LXIXUMA1 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSB012NE2LXIXUMA1 | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 25 volts | |||
| PD | 2800 to 57000 milliwatts |
