Infineon Technologies AG Datasheets for Transistors
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
Transistors: Learn more
| Product Name | Notes |
|---|---|
| Rad hard high and low side gate driver - COTS RIC7S113 is a rad hard high voltage, high speed power MOSFET and IGBT driver with independent high and low side... | |
| Rad hard high and low side gate driver - MIL-PRF-38534 Level B Screening RIC7S113 is a rad hard high voltage, high speed power MOSFET and IGBT driver with independent high... | |
| Rad hard high and low side gate driver - MIL-PRF-38534 Level S Screening RIC7S113 is a rad hard high voltage, high speed power MOSFET and IGBT driver with independent high... | |
| Rad hard high and low side gate driver - MIL-PRF-38535 Level B Screening RIC7S113 is a rad hard high voltage, high speed power MOSFET and IGBT driver with independent high... | |
| Rad hard high and low side gate driver - MIL-PRF-38535 Level S Screening RIC7S113 is a rad hard high voltage, high speed power MOSFET and IGBT driver with independent high... | |
| Rad hard non-inverting dual output gate driver. - COTS RIC74424 is a high speed, dual channel low side gate driver intended for harsh radiation environments. Summary of features Dual independent... | |
| Rad hard non-inverting dual output gate driver. - MIL-PRF-38535 Level B Screening RIC74424 is a high speed, dual channel low side gate driver intended for harsh radiation environments. Summary of... | |
| Rad hard non-inverting dual output gate driver. - MIL-PRF-38535 Level S Screening RIC74424 is a high speed, dual channel low side gate driver intended for harsh radiation environments. Summary of... | |
| Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // High Voltage Transistor // PZTA42 | |
| The Press Pack IGBT offers 2000 A with internal freewheeling diode using Infineon Trench 4.5 kV IGBT chips. Summary of Features Behavior in case of a failure Hermetically sealed housing... | |
| The Press Pack IGBT offers 3000 A without internal freewheeling diode using Infineon Trench 4.5 kV IGBT chips. Summary of Features Behavior in case of a failure Hermetically sealed housing... |
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