Infineon Technologies AG Datasheets for Transistors
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
Transistors: Learn more
| Product Name | Notes |
|---|---|
| -100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package - A JANTXV2N6845 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts 2N6845 A... | |
| -100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package - A JANTXV2N6849 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts 2N6849 A... | |
| -200V Single P-Channel Hi-Rel MOSFET in a SMD-1 package - A JANTXV2N7237U with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRFN9240 A... | |
| -200V Single P-Channel Hi-Rel MOSFET in a TO-205AF package - A JANTXV2N6851 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts 2N6851 A... | |
| 100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package - A JANTX2N7336 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts... | |
| 100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package - A JANTXV2N7336 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts... | |
| 100V Quad N-Channel MOSFET in a MO-036AB package - A JANTX2N7334 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRFG110 A IRFG110... | |
| 100V Quad N-Channel MOSFET in a MO-036AB package - A JANTXV2N7334 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRFG110 A IRFG110... | |
| 100V Quad P-Channel MOSFET in a MO-036AB package - A JANTX2N7335 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRFG9110 A IRFG9110... | |
| 100V Quad P-Channel MOSFET in a MO-036AB package - A JANTXV2N7335 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRFG9110 A IRFG9110... | |
| 100V Single N-Channel Hi-Rel MOSFET in a TO-205AF package - A JANTXV2N6796 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts 2N6796 A... | |
| 100V Single N-Channel Hi-Rel MOSFET in a TO-254AA package - A JANTXV2N7218 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRFM140 A... | |
| 200V Single N-Channel Hi-Rel MOSFET in a SMD-1 package - A JANTXV2N7219U with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRFN240 A... | |
| 200V Single N-Channel Hi-Rel MOSFET in a TO-205AF package - A JANTXV2N6784 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts 2N6784 A... | |
| 200V Single N-Channel Hi-Rel MOSFET in a TO-254AA package - A JANTXV2N7225 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRFM250 A... | |
| 400V Single N-Channel Hi-Rel MOSFET in a 18-pin LCC package - A JANTXV2N6800U with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts JANTX2N6800U... | |
| 400V Single N-Channel Hi-Rel MOSFET in a SMD-1 package - A JANTXV2N7227U with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRFN350 A... | |
| 500V Single N-Channel Hi-Rel MOSFET in a 18-pin LCC package - A JANTXV2N6802U with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRFE430... | |
| 500V Single N-Channel Hi-Rel MOSFET in a TO-204AA package - A JANTXV2N6770 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts 2N6770 A... | |
| Rad hard non-inverting dual output gate driver. - COTS RIC74424 is a high speed, dual channel low side gate driver intended for harsh radiation environments. Summary of features Dual independent... | |
| Rad hard non-inverting dual output gate driver. - MIL-PRF-38535 Level B Screening RIC74424 is a high speed, dual channel low side gate driver intended for harsh radiation environments. Summary of... | |
| Rad hard, -100V, -22A, single, P-channel MOSFET, R4 in a SMD-1 package - SMD-1, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge... | |
| Rad hard, -100V, -6.5A, single, P-channel MOSFET, R4 in a TO-205AF package - TO-205AF, 300 krad(Si) TID, QPL Features Single Event Effect (SEE) Hardened Low RDS(on) Proton tolerant Low total... | |
| Rad hard, -200V, -27A, single, P-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened Identical pre- and post-electrical test conditions... | |
| Rad hard, -200V, -27A, single, P-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened Identical pre- and post-electrical test conditions... | |
| Rad hard, 100V, 11.7A, single, N-channel MOSFET, R5 in a TO-205AF package - TO-205AF, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Repetitive avalanche ratings Dynamic... | |
| Rad hard, 200V, 5.5A, single, N-channel MOSFET, R4 in an 18-pin LCC package - 18-pin LCC, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total... | |
| Rad hard, 200V, 9.4A, single, N-channel MOSFET, R4 in a TO-257AA package - TO-257AA, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge... | |
| Rad hard, 200V, 9.4A, single, N-channel MOSFET, R4 in a TO-257AA package - TO-257AA, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge... | |
| Rad hard, 500V, 2.6A, single, N-channel MOSFET, R4 in a TO-205AF package - TO-205AF, 100 krad(Si) TID, QPL Features Single Event Effect (SEE) Hardened Ultra low RDS(on) Low total gate... | |
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| The Press Pack IGBT offers 2000 A with internal freewheeling diode using Infineon Trench 4.5 kV IGBT chips. Summary of Features Behavior in case of a failure Hermetically sealed housing... | |
| The Press Pack IGBT offers 3000 A without internal freewheeling diode using Infineon Trench 4.5 kV IGBT chips. Summary of Features Behavior in case of a failure Hermetically sealed housing... |
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