BFY193F(ES) is a hermetically sealed, space-qualified NPN silicon RF transistor designed for low-noise, high-gain amplification up to 2 GHz. It is packaged in a Micro-X1 case with four pins configured as collector, emitter, base, and emitter. The device has a maximum collector-emitter voltage of 12 V, a collector current rating of 80 mA, and a total power dissipation of 580 mW at a case temperature of 104 ⁰C. The transition frequency is 8 GHz, with a noise figure of 1.75 dB at 2 GHz and a power gain of 12.5 to 13.5 dB under specified conditions. The junction and operating temperature range is -65 ⁰C to 200 ⁰C. The part meets ESCC Detail Specification No. 5611/006 and is ESD sensitive.
HiRel Microwave Transistor
Summary of Features
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | BFY193F(ES) |
| Product Name | RF - High Reliability Discrete - HiRel Silicon Bipolar Transistor - BFY193F(ES) |
| Packing Method | WAFER UNSAWN |
