Infineon Technologies AG MOSFET BSC030N03LS G

Description
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
Description
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
Datasheet
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N-channel MOSFET for DC/DC converters and SMPS with a 30 V drain-source voltage and 100 A continuous drain current, packaged in a PG-TDSON-8 case. It has a maximum on-resistance of 3 mΩ at 10 V gate-source voltage and 30 A drain current, and is rated for single-pulse avalanche energy of 75 mJ. The device features a thermal resistance from junction to case of 1.8 K/W, operates from -55 °C to 150 °C, and meets RoHS and IEC 61249-2-21 halogen-free requirements.

Datasheet Summary
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N-channel MOSFET for DC/DC converters and SMPS with a 30 V drain-source voltage and 100 A continuous drain current, packaged in a PG-TDSON-8 case. It has a maximum on-resistance of 3 mΩ at 10 V gate-source voltage and 30 A drain current, and is rated for single-pulse avalanche energy of 75 mJ. The device features a thermal resistance from junction to case of 1.8 K/W, operates from -55 °C to 150 °C, and meets RoHS and IEC 61249-2-21 halogen-free requirements.

Suppliers

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Sheung Wan, Hong Kong
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3

MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number BSC030N03LS G
Product Name MOSFET
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