Infineon Technologies AG 30V 100A MOSFET Transistor BSC016N03MS G

Description
MOSFETs N-Ch 30V 100A TDSON-8 OptiMOS 3M Product overview: BSC016N03MS G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 100A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-BSC016N03MS G can be used for catalog matching and distributor lookup.
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Description
MOSFETs N-Ch 30V 100A TDSON-8 OptiMOS 3M Product overview: BSC016N03MS G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 100A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-BSC016N03MS G can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
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Supplier Links
Singapore, Singapore
30V 100A MOSFET Transistor
2088-BSC016N03MS G
30V 100A MOSFET Transistor 2088-BSC016N03MS G
MOSFETs N-Ch 30V 100A TDSON-8 OptiMOS 3M Product overview: BSC016N03MS G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 100A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-BSC016N03MS G can be used for catalog matching and distributor lookup.

MOSFETs N-Ch 30V 100A TDSON-8 OptiMOS 3M Product overview: BSC016N03MS G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 100A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-BSC016N03MS G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - 079685-BSC016N03MS G - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products
079685-BSC016N03MS G
Discrete Semiconductor Products 079685-BSC016N03MS G
Manufacturer: Infineon Technologies Win Source Part Number: 079685-BSC016N03MS G Category: Discrete Semiconductor Products Family: FETs - Single Series: OptiMOS Packaging: Reel Mounting Style: SMD/SMT Operating Temperature Range: -55°C ~ 150°C (TJ) Package: 8-PowerTDFN Manufacturer Device Package: PG-TDSON-8 Standard Package: 1 Catalog: N-Channel Standard FETs FET Type: MOSFET N-Channel Metal Oxide FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 28A (Ta) 100A (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) @ Vgs: 173nC @ 10V Input Capacitance (Ciss) @ Vds: 13000pF @ 15V Power - Max: 125W Rds On (Max) @ Id Vgs: 1.6 mOhm @ 30A 10V Family Name: BSC016N03MS Alternative Parts (Cross-Reference): BSC016N03MSGXT; FDMS1D5N03; TSM015NA03CRRLG; RS1E350GNTB; Introduction Date: October 29, 2007 ECCN: EAR99 Estimated EOL Date: 2029 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 079685-BSC016N03MS G
Category: Discrete Semiconductor Products
Family: FETs - Single
Series: OptiMOS
Packaging: Reel
Mounting Style: SMD/SMT
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-PowerTDFN
Manufacturer Device Package: PG-TDSON-8
Standard Package: 1
Catalog: N-Channel Standard FETs
FET Type: MOSFET N-Channel Metal Oxide
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta) 100A (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) @ Vgs: 173nC @ 10V
Input Capacitance (Ciss) @ Vds: 13000pF @ 15V
Power - Max: 125W
Rds On (Max) @ Id Vgs: 1.6 mOhm @ 30A 10V
Family Name: BSC016N03MS
Alternative Parts (Cross-Reference): BSC016N03MSGXT; FDMS1D5N03; TSM015NA03CRRLG; RS1E350GNTB;
Introduction Date: October 29, 2007
ECCN: EAR99
Estimated EOL Date: 2029
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance

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Sheung Wan, Hong Kong
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M

MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 2088-BSC016N03MS G 079685-BSC016N03MS G BSC016N03MS G
Product Name 30V 100A MOSFET Transistor Discrete Semiconductor Products MOSFET
Polarity N-Channel N-Channel
MOSFET Operating Mode Enhancement
Transconductance 0.0700 kS
PD 2.5 milliwatts
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