Infineon Technologies AG Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single BSC010N04LSTATMA1

Description
Win Source Part Number: 971599-BSC010N04LSTA TMA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: OptiMOS™ Package: Tape & Reel Standard Package: 5,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3W (Ta), 167W (Tc) Package / Case: 8-PowerTDFN Supplier Device Package: PG-TDSON-8 FL Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9520 pF @ 20 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 71 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: BSC010N04LSTATMA1DKR ,BSC010N04LSTATMA1TR ,BSC010N04LSTATMA1CT ,BSC010N04LSTATMA1-N D,SP001657068 Base Product Number: BSC010 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Description
Win Source Part Number: 971599-BSC010N04LSTA TMA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: OptiMOS™ Package: Tape & Reel Standard Package: 5,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3W (Ta), 167W (Tc) Package / Case: 8-PowerTDFN Supplier Device Package: PG-TDSON-8 FL Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9520 pF @ 20 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 71 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: BSC010N04LSTATMA1DKR ,BSC010N04LSTATMA1TR ,BSC010N04LSTATMA1CT ,BSC010N04LSTATMA1-N D,SP001657068 Base Product Number: BSC010 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 971599-BSC010N04LSTATMA1 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
971599-BSC010N04LSTATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 971599-BSC010N04LSTATMA1
Win Source Part Number: 971599-BSC010N04LSTA TMA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: OptiMOS™ Package: Tape & Reel Standard Package: 5,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3W (Ta), 167W (Tc) Package / Case: 8-PowerTDFN Supplier Device Package: PG-TDSON-8 FL Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9520 pF @ 20 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 71 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: BSC010N04LSTATMA1DKR ,BSC010N04LSTATMA1TR ,BSC010N04LSTATMA1CT ,BSC010N04LSTATMA1-N D,SP001657068 Base Product Number: BSC010 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 971599-BSC010N04LSTATMA1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: OptiMOS™
Package: Tape & Reel
Standard Package: 5,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TDSON-8 FL
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9520 pF @ 20 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 71 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: BSC010N04LSTATMA1DKR,BSC010N04LSTATMA1TR,BSC010N04LSTATMA1CT,BSC010N04LSTATMA1-ND,SP001657068
Base Product Number: BSC010
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Buy Now Datasheet
Single FETs, MOSFETs - BSC010N04LSTATMA1 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
BSC010N04LSTATMA1
Single FETs, MOSFETs BSC010N04LSTATMA1
MOSFET N-CH 40V 39A/100A TDSON

MOSFET N-CH 40V 39A/100A TDSON

Supplier's Site Datasheet
Single FETs, MOSFETs - BSC010N04LSTATMA1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
BSC010N04LSTATMA1TR-ND
Single FETs, MOSFETs BSC010N04LSTATMA1TR-ND
N-Channel 40V 39A (Ta), 100A (Tc) 3W (Ta), 167W (Tc) Surface Mount PG-TDSON-8 FL

N-Channel 40V 39A (Ta), 100A (Tc) 3W (Ta), 167W (Tc) Surface Mount PG-TDSON-8 FL

Buy Now Datasheet
Single FETs, MOSFETs - BSC010N04LSTATMA1CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
BSC010N04LSTATMA1CT-ND
Single FETs, MOSFETs BSC010N04LSTATMA1CT-ND
N-Channel 40V 39A (Ta), 100A (Tc) 3W (Ta), 167W (Tc) Surface Mount PG-TDSON-8 FL

N-Channel 40V 39A (Ta), 100A (Tc) 3W (Ta), 167W (Tc) Surface Mount PG-TDSON-8 FL

Buy Now Datasheet
Single FETs, MOSFETs - BSC010N04LSTATMA1DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
BSC010N04LSTATMA1DKR-ND
Single FETs, MOSFETs BSC010N04LSTATMA1DKR-ND
N-Channel 40V 39A (Ta), 100A (Tc) 3W (Ta), 167W (Tc) Surface Mount PG-TDSON-8 FL

N-Channel 40V 39A (Ta), 100A (Tc) 3W (Ta), 167W (Tc) Surface Mount PG-TDSON-8 FL

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BSC010N04LSTATMA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BSC010N04LSTATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BSC010N04LSTATMA1
MOSFET N-CH 40V 39A/100A TDSON

MOSFET N-CH 40V 39A/100A TDSON

Supplier's Site
Mosfet, N-Ch, 40 V, 100A, 167W, Tdson; Transistor Polarity Infineon - 93AC6979 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 40 V, 100A, 167W, Tdson; Transistor Polarity Infineon
93AC6979
Mosfet, N-Ch, 40 V, 100A, 167W, Tdson; Transistor Polarity Infineon 93AC6979
MOSFET, N-CH, 40 V, 100A, 167W, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power RoHS Compliant: Yes

MOSFET, N-CH, 40 V, 100A, 167W, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
MOSFET DIFFERENTIATED MOSFETS

MOSFET DIFFERENTIATED MOSFETS

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 971599-BSC010N04LSTATMA1 BSC010N04LSTATMA1 BSC010N04LSTATMA1TR-ND BSC010N04LSTATMA1 93AC6979 BSC010N04LSTATMA1
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 40 V, 100A, 167W, Tdson; Transistor Polarity Infineon MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel
PD 3000 to 167000 milliwatts 3000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type SOT3 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN TO-3
Transistor Technology / Material MOSFET (Metal Oxide)
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