Win Source Part Number: 971599-BSC010N04LSTA
Category: Discrete Semiconductor Products>Transistors
Series: OptiMOS™
Package: Tape & Reel
Standard Package: 5,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TDSON-8 FL
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9520 pF @ 20 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 71 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: BSC010N04LSTATMA1DKR
Base Product Number: BSC010
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
MOSFET N-CH 40V 39A/100A TDSON
N-Channel 40V 39A (Ta), 100A (Tc) 3W (Ta), 167W (Tc) Surface Mount PG-TDSON-8 FL
N-Channel 40V 39A (Ta), 100A (Tc) 3W (Ta), 167W (Tc) Surface Mount PG-TDSON-8 FL
N-Channel 40V 39A (Ta), 100A (Tc) 3W (Ta), 167W (Tc) Surface Mount PG-TDSON-8 FL
MOSFET N-CH 40V 39A/100A TDSON Product overview: BSC010N04LSTATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 39A, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 39A, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC010N04LSTATMA
MOSFET DIFFERENTIATED MOSFETS
MOSFET, N-CH, 40 V, 100A, 167W, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power RoHS Compliant: Yes
MOSFET N-CH 40V 39A/100A TDSON
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 971599-BSC010N04LSTATMA1 | BSC010N04LSTATMA1 | BSC010N04LSTATMA1TR-ND | 278-BSC010N04LSTATMA1 | BSC010N04LSTATMA1 | 93AC6979 | BSC010N04LSTATMA1 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Single FETs, MOSFETs | 40V 39A 100A MOSFET Transistor | MOSFET | Mosfet, N-Ch, 40 V, 100A, 167W, Tdson; Transistor Polarity Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| PD | 3000 to 167000 milliwatts | 3000 milliwatts | 139 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||
| Package Type | SOT3 | 8-PowerTDFN | 8-PowerTDFN | Tape & Reel (TR) | TO-3 | 8-PowerTDFN | |
| Transistor Technology / Material | MOSFET (Metal Oxide) |
