Win Source Part Number: 971599-BSC010N04LSTA
Category: Discrete Semiconductor Products>Transistors
Series: OptiMOS™
Package: Tape & Reel
Standard Package: 5,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TDSON-8 FL
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9520 pF @ 20 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 71 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: BSC010N04LSTATMA1DKR
Base Product Number: BSC010
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
MOSFET N-CH 40V 39A/100A TDSON
N-Channel 40V 39A (Ta), 100A (Tc) 3W (Ta), 167W (Tc) Surface Mount PG-TDSON-8 FL
N-Channel 40V 39A (Ta), 100A (Tc) 3W (Ta), 167W (Tc) Surface Mount PG-TDSON-8 FL
N-Channel 40V 39A (Ta), 100A (Tc) 3W (Ta), 167W (Tc) Surface Mount PG-TDSON-8 FL
MOSFET N-CH 40V 39A/100A TDSON
MOSFET, N-CH, 40 V, 100A, 167W, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power RoHS Compliant: Yes
MOSFET DIFFERENTIATED MOSFETS
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 971599-BSC010N04LSTATMA1 | BSC010N04LSTATMA1 | BSC010N04LSTATMA1TR-ND | BSC010N04LSTATMA1 | 93AC6979 | BSC010N04LSTATMA1 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 40 V, 100A, 167W, Tdson; Transistor Polarity Infineon | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | |||
| PD | 3000 to 167000 milliwatts | 3000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||
| Package Type | SOT3 | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN | TO-3 | |
| Transistor Technology / Material | MOSFET (Metal Oxide) |
