Infineon Technologies AG RF FETs, MOSFETs BG 3230 E6327

Dual N-channel MOSFET for UHF and VHF tuners with a 5V supply, integrated bias network, and gate protection diodes in a SOT363 package. It features a maximum drain-source voltage of 8 V, continuous drain current of 25 mA, total power dissipation of 200 mW, and a channel temperature rating of 150 °C. The device offers a power gain of 24 dB at 800 MHz, a noise figure of 1.3 dB at 800 MHz, and an AGC range of 45 dB. It meets thermal resistance of ≤280 K/W and is marked with KBs or KIs depending on variant.