Infineon Technologies AG MOSFET BSC014N03MS G

The BSC014N03MS G is an N-channel MOSFET in a PG-TDSON-8 package, optimized for 5V driver applications in notebook, VGA, and point-of-load circuits. It has a drain-source breakdown voltage of 30 V, a continuous drain current of 100 A, and a maximum on-resistance of 1.75 mΩ at V_GS=4.5 V and 1.4 mΩ at V_GS=10 V. The device supports a pulsed drain current up to 400 A and can withstand a single-pulse avalanche energy of 340 mJ. Its gate-source voltage rating is ±20 V, and it features a thermal resistance from junction to case of 0.9 K/W (bottom) and 20 K/W (top). The transistor is RoHS compliant, halogen-free per IEC 61249-2-21, and qualified per JEDEC standards. It is designed for high-frequency switching in SMPS applications with low gate charge and excellent FOM.