MACOM RF & MW LNA MAAL-011151-DIE

Description
The MAAL-011151-DIE is an easy to use, wideband low noise distributed amplifier die. It operates from 2 to 18 GHz and provides 17 dB of linear gain, 16 dBm of P1dB and 4 dB of noise figure at 8 GHz. The input and output are fully matched to 50 Ohm with typical return loss >15 dB. The RF input and RF output ports are DC blocked. Amplifier control is available through the use of a control circuit or by direct bias injection. This product is fabricated using a low phase noise HBT process which features full passivation for enhanced reliability. The MAAL-011151-DIE can be used as a low noise amplifier stage for signal generation applications. This device is ideally suited for Test and Measurement, EW, ECM, and Radar applications where ultra low phase noise and drive power is required.
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Description
The MAAL-011151-DIE is an easy to use, wideband low noise distributed amplifier die. It operates from 2 to 18 GHz and provides 17 dB of linear gain, 16 dBm of P1dB and 4 dB of noise figure at 8 GHz. The input and output are fully matched to 50 Ohm with typical return loss >15 dB. The RF input and RF output ports are DC blocked. Amplifier control is available through the use of a control circuit or by direct bias injection. This product is fabricated using a low phase noise HBT process which features full passivation for enhanced reliability. The MAAL-011151-DIE can be used as a low noise amplifier stage for signal generation applications. This device is ideally suited for Test and Measurement, EW, ECM, and Radar applications where ultra low phase noise and drive power is required.
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Suppliers

Company
Product
Description
Supplier Links
RF & MW LNA - MAAL-011151-DIE - Richardson RFPD
Downers Grove, IL, United States
RF & MW LNA
MAAL-011151-DIE
RF & MW LNA MAAL-011151-DIE
The MAAL-011151-DIE is an easy to use, wideband low noise distributed amplifier die. It operates from 2 to 18 GHz and provides 17 dB of linear gain, 16 dBm of P1dB and 4 dB of noise figure at 8 GHz. The input and output are fully matched to 50 Ohm with typical return loss >15 dB. The RF input and RF output ports are DC blocked. Amplifier control is available through the use of a control circuit or by direct bias injection. This product is fabricated using a low phase noise HBT process which features full passivation for enhanced reliability. The MAAL-011151-DIE can be used as a low noise amplifier stage for signal generation applications. This device is ideally suited for Test and Measurement, EW, ECM, and Radar applications where ultra low phase noise and drive power is required.

The MAAL-011151-DIE is an easy to use, wideband low noise distributed amplifier die. It operates from 2 to 18 GHz and provides 17 dB of linear gain, 16 dBm of P1dB and 4 dB of noise figure at 8 GHz. The input and output are fully matched to 50 Ohm with typical return loss >15 dB.

The RF input and RF output ports are DC blocked. Amplifier control is available through the use of a control circuit or by direct bias injection.

This product is fabricated using a low phase noise HBT process which features full passivation for enhanced reliability.

The MAAL-011151-DIE can be used as a low noise amplifier stage for signal generation applications. This device is ideally suited for Test and Measurement, EW, ECM, and Radar applications where ultra low phase noise and drive power is required.

Supplier's Site Datasheet
Shenzhen, China
RF and Wireless - RF Amplifiers
MAAL-011151-DIE
RF and Wireless - RF Amplifiers MAAL-011151-DIE
DISTRIBUTED AMPLIFIER, DIE, LOW

DISTRIBUTED AMPLIFIER, DIE, LOW

Supplier's Site

Technical Specifications

  Richardson RFPD Acme Chip Technology Co., Limited
Product Category RF Amplifiers RF Amplifiers
Product Number MAAL-011151-DIE MAAL-011151-DIE
Product Name RF & MW LNA RF and Wireless - RF Amplifiers
Amplifier Type Low Noise Amplifier
Frequency Range 2000 to 18000 MHz 2000 to 18000 MHz
Maximum Gain 16 dB 15.5 dB
Output Power 17.5 dBm
Noise Figure 5 dB
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