Microchip Technology, Inc. RF & MW Power Amplifier ICP1240-1-110I

Description
The ICP1240 is a three stage MMIC power amplifier in bare die form, fabricated using GaN-on-SiC technology. ICP1240 operates from 6-18GHz with 41dBm output power, >16% PAE and 23dB typical small signal gain. ICP1240 is well suited for a variety of commercial, aerospace and defense applications.
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Description
The ICP1240 is a three stage MMIC power amplifier in bare die form, fabricated using GaN-on-SiC technology. ICP1240 operates from 6-18GHz with 41dBm output power, >16% PAE and 23dB typical small signal gain. ICP1240 is well suited for a variety of commercial, aerospace and defense applications.
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Suppliers

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Description
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RF & MW Power Amplifier - ICP1240-1-110I - Richardson RFPD
Downers Grove, IL, United States
RF & MW Power Amplifier
ICP1240-1-110I
RF & MW Power Amplifier ICP1240-1-110I
The ICP1240 is a three stage MMIC power amplifier in bare die form, fabricated using GaN-on-SiC technology. ICP1240 operates from 6-18GHz with 41dBm output power, >16% PAE and 23dB typical small signal gain. ICP1240 is well suited for a variety of commercial, aerospace and defense applications.

The ICP1240 is a three stage MMIC power amplifier in bare die form, fabricated using GaN-on-SiC technology. ICP1240 operates from 6-18GHz with 41dBm output power, >16% PAE and 23dB typical small signal gain. ICP1240 is well suited for a variety of commercial, aerospace and defense applications.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF Amplifiers
Product Number ICP1240-1-110I
Product Name RF & MW Power Amplifier
Amplifier Type Power Amplifier
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