Richardson RFPD RF & MW LNA HMC8412CHIPS-SX

Description
The HMC8412CHIPS is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise amplifier that operates from 0.4 GHz to 10 GHz. The HMC8412CHIPS provides ≤15 dB of typical gain, ≤19 dBm typical output power at 1 dB gain compression (OP1dB), and a typical output third-order intercept (OIP3) of 32 dBm. The HMC8412CHIPS requires 60 mA from a 5 V supply on VDD. The HMC8412CHIPS also features inputs and outputs (I/Os) that are internally matched to 50 Ohm and facilitates integration into multichip modules (MCMs). In addition, the bias choke to the HMC8412CHIPS and the dc blocking capacitors on the RFIN and RFOUT pads are integrated, creating a small form factor solution.
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Description
The HMC8412CHIPS is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise amplifier that operates from 0.4 GHz to 10 GHz. The HMC8412CHIPS provides ≤15 dB of typical gain, ≤19 dBm typical output power at 1 dB gain compression (OP1dB), and a typical output third-order intercept (OIP3) of 32 dBm. The HMC8412CHIPS requires 60 mA from a 5 V supply on VDD. The HMC8412CHIPS also features inputs and outputs (I/Os) that are internally matched to 50 Ohm and facilitates integration into multichip modules (MCMs). In addition, the bias choke to the HMC8412CHIPS and the dc blocking capacitors on the RFIN and RFOUT pads are integrated, creating a small form factor solution.
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RF & MW LNA - HMC8412CHIPS-SX - Richardson RFPD
Downers Grove, IL, United States
RF & MW LNA
HMC8412CHIPS-SX
RF & MW LNA HMC8412CHIPS-SX
The HMC8412CHIPS is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise amplifier that operates from 0.4 GHz to 10 GHz. The HMC8412CHIPS provides ≤15 dB of typical gain, ≤19 dBm typical output power at 1 dB gain compression (OP1dB), and a typical output third-order intercept (OIP3) of 32 dBm. The HMC8412CHIPS requires 60 mA from a 5 V supply on VDD. The HMC8412CHIPS also features inputs and outputs (I/Os) that are internally matched to 50 Ohm and facilitates integration into multichip modules (MCMs). In addition, the bias choke to the HMC8412CHIPS and the dc blocking capacitors on the RFIN and RFOUT pads are integrated, creating a small form factor solution.

The HMC8412CHIPS is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise amplifier that operates from 0.4 GHz to 10 GHz. The HMC8412CHIPS provides ≤15 dB of typical gain, ≤19 dBm typical output power at 1 dB gain compression (OP1dB), and a typical output third-order intercept (OIP3) of 32 dBm.

The HMC8412CHIPS requires 60 mA from a 5 V supply on VDD. The HMC8412CHIPS also features inputs and outputs (I/Os) that are internally matched to 50 Ohm and facilitates integration into multichip modules (MCMs). In addition, the bias choke to the HMC8412CHIPS and the dc blocking capacitors on the RFIN and RFOUT pads are integrated, creating a small form factor solution.

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Technical Specifications

  Richardson RFPD
Product Category RF Amplifiers
Product Number HMC8412CHIPS-SX
Product Name RF & MW LNA
Amplifier Type Low Noise Amplifier
Frequency Range 400 to 10000 MHz
Maximum Gain 15 dB
Output Power 19 dBm
Noise Figure 1.5 dB
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