Richardson RFPD RF & MW Power Amplifier HMC943APM5E

Description
The HMC943APM5E is a four stage, gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), >1.5 W power amplifier that operates between 24 GHz to 34 GHz. The HMC943APM5E provides 23 dB of gain, 34 dBm of saturated output power (PSAT), and 23% power added efficiency (PAE) from a 5.5 V supply. The high output third-order intercept (IP3) of 39 dBm makes the HMC943APM5E ideal for microwave radio applications. A power detector output is also available. The HMC943APM5E amplifier input/outputs (I/Os) are internally matched to 50 Ohm. The device is packaged in a leadless, 5 mm × 5 mm, surface-mount LFCSP_CAV package, and requires no external matching components.
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Description
The HMC943APM5E is a four stage, gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), >1.5 W power amplifier that operates between 24 GHz to 34 GHz. The HMC943APM5E provides 23 dB of gain, 34 dBm of saturated output power (PSAT), and 23% power added efficiency (PAE) from a 5.5 V supply. The high output third-order intercept (IP3) of 39 dBm makes the HMC943APM5E ideal for microwave radio applications. A power detector output is also available. The HMC943APM5E amplifier input/outputs (I/Os) are internally matched to 50 Ohm. The device is packaged in a leadless, 5 mm × 5 mm, surface-mount LFCSP_CAV package, and requires no external matching components.
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RF & MW Power Amplifier - HMC943APM5E - Richardson RFPD
Downers Grove, IL, United States
RF & MW Power Amplifier
HMC943APM5E
RF & MW Power Amplifier HMC943APM5E
The HMC943APM5E is a four stage, gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), >1.5 W power amplifier that operates between 24 GHz to 34 GHz. The HMC943APM5E provides 23 dB of gain, 34 dBm of saturated output power (PSAT), and 23% power added efficiency (PAE) from a 5.5 V supply. The high output third-order intercept (IP3) of 39 dBm makes the HMC943APM5E ideal for microwave radio applications. A power detector output is also available. The HMC943APM5E amplifier input/outputs (I/Os) are internally matched to 50 Ohm. The device is packaged in a leadless, 5 mm × 5 mm, surface-mount LFCSP_CAV package, and requires no external matching components.

The HMC943APM5E is a four stage, gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), >1.5 W power amplifier that operates between 24 GHz to 34 GHz. The HMC943APM5E provides 23 dB of gain, 34 dBm of saturated output power (PSAT), and 23% power added efficiency (PAE) from a 5.5 V supply. The high output third-order intercept (IP3) of 39 dBm makes the HMC943APM5E ideal for microwave radio applications. A power detector output is also available. The HMC943APM5E amplifier input/outputs (I/Os) are internally matched to 50 Ohm. The device is packaged in a leadless, 5 mm × 5 mm, surface-mount LFCSP_CAV package, and requires no external matching components.

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Technical Specifications

  Richardson RFPD
Product Category RF Amplifiers
Product Number HMC943APM5E
Product Name RF & MW Power Amplifier
Amplifier Type Power Amplifier
Frequency Range 24000 to 34000 MHz
Maximum Gain 23 dB
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