The HMC8412 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.4 GHz to 11 GHz.
The HMC8412 provides a typical gain of 15.5 dB, a 1.4 dB typical noise figure, and a typical output third-order intercept (OIP3) of ≤33 dBm, requiring only 60 mA from a 5 V drain supply voltage. The saturated output power (PSAT) of ≤20.5 dBm typical enables the low noise amplifier (LNA) to function as a local oscillator (LO) driver for many Analog Devices, Inc., balanced, in phase and quadrature (I/Q) or image rejection mixers.
The HMC8412 also features inputs and outputs that are internally matched to 50 Ω, making the device ideal for surface-mount technology (SMT)-based, high capacity microwave radio applications.
The HMC8412 is housed in an RoHS-compliant, 2 mm × 2 mm, 6-lead LFCSP.
| Richardson RFPD | |
|---|---|
| Product Category | RF Amplifiers |
| Product Number | HMC8412LP2FETR |
| Product Name | RF & MW LNA |
| Amplifier Type | Low Noise Amplifier |
| Frequency Range | 400 to 11000 MHz |
| Maximum Gain | 15 dB |
| Output Power | 18 dBm |
| Noise Figure | 1.5 dB |
