Microchip Technology, Inc. RF & MW Power Amplifier ICP1040-1-110I

Description
MICROCHIP’s ICP1040 is a two-stage MMIC power amplifier in bare die form, fabricated using GaN on SiC technology. ICP1040 operates from 7.9 GHz – 11GHz with 41 dBm output power, 40% typical PAE and 22 dB small signal gain. ICP1040 is well suited to commercial and defense applications.
  • RF & MW Power Amplifier - ICP1040-1-110I - Richardson RFPD
    Richardson RFPD
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Description
MICROCHIP’s ICP1040 is a two-stage MMIC power amplifier in bare die form, fabricated using GaN on SiC technology. ICP1040 operates from 7.9 GHz – 11GHz with 41 dBm output power, 40% typical PAE and 22 dB small signal gain. ICP1040 is well suited to commercial and defense applications.
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RF & MW Power Amplifier - ICP1040-1-110I - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
RF & MW Power Amplifier
ICP1040-1-110I
RF & MW Power Amplifier ICP1040-1-110I
MICROCHIP’s ICP1040 is a two-stage MMIC power amplifier in bare die form, fabricated using GaN on SiC technology. ICP1040 operates from 7.9 GHz – 11GHz with 41 dBm output power, 40% typical PAE and 22 dB small signal gain. ICP1040 is well suited to commercial and defense applications.

MICROCHIP’s ICP1040 is a two-stage MMIC power amplifier in bare die form, fabricated using GaN on SiC technology. ICP1040 operates from 7.9 GHz – 11GHz with 41 dBm output power, 40% typical PAE and 22 dB small signal gain. ICP1040 is well suited to commercial and defense applications.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF Amplifiers
Product Number ICP1040-1-110I
Product Name RF & MW Power Amplifier
Amplifier Type Power Amplifier
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