The HMC1126ACEZ is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), low noise amplifier that operates from 400 MHz to 52 GHz. The HMC1126ACEZ provides 12 dB of typical gain, 28.5 dBm typical output third-order intercept (OIP3), 17.5 dBm typical output power at 1 dB gain compression (OP1dB), and a 3.5 dB typical noise figure at 10 GHz to 26 GHz. The HMC1126ACEZ requires 85 mA from a 5 V supply. All of the typically required external passive components for operation (ac coupling capacitors and power supply decoupling capacitors) are integrated, which facilitates a small and compact printed circuit board (PCB) footprint.
The HMC1126ACEZ is housed in a 5.00 mm × 5.00 mm, 24-terminal chip array small outline no lead cavity (LGA_CAV) package.
| Richardson RFPD | |
|---|---|
| Product Category | RF Amplifiers |
| Product Number | HMC1126ACEZ |
| Product Name | RF & MW Power Amplifier |
| Amplifier Type | Power Amplifier |
| Frequency Range | 400 to 52000 MHz |
| Maximum Gain | 12 dB |
