The HMC8402 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), low noise amplifier which operates between 2 GHz and 30 GHz. The amplifier provides 13.5 dB of gain, 2 dB noise figure, 26 dBm output IP3, and 21.5 dBm of output power at 1 dB gain compression while requiring 68 mA from a 7 V supply. The HMC8402 is self biased with only a single positive supply needed to achieve a drain current IDQ of 68 mA.
The HMC8402 amplifier input/outputs are internally matched to 50 Ω facilitating integration into multichip modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).
| Richardson RFPD | |
|---|---|
| Product Category | RF Amplifiers |
| Product Number | HMC8402 |
| Product Name | RF & MW LNA |
| Amplifier Type | Low Noise Amplifier |
| Frequency Range | 2000 to 30000 MHz |
| Maximum Gain | 13.5 dB |
| Output Power | 20 dBm |
| Noise Figure | 2.5 dB |
