Richardson RFPD mmW LNA HMC8325

Description
The HMC8325 is an integrated E-band gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), low noise amplifier (LNA) chip that operates from 71 GHz to 86 GHz. The HMC8325 provides 21 dB of gain, 13 dBm of output P1dB, 22 dBm of OIP3, and 17 dBm of PSAT while requiring only 50 mA from a 3 V power supply. The HMC8325 exhibits excellent linearity and is optimized for E-band communications and high capacity, wireless backhaul radio systems. All data is taken with the chip in a 50 Ω test fixture connected via a 3 mil wide × 0.5 mil thick × 7 mil long ribbon on each port.
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Description
The HMC8325 is an integrated E-band gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), low noise amplifier (LNA) chip that operates from 71 GHz to 86 GHz. The HMC8325 provides 21 dB of gain, 13 dBm of output P1dB, 22 dBm of OIP3, and 17 dBm of PSAT while requiring only 50 mA from a 3 V power supply. The HMC8325 exhibits excellent linearity and is optimized for E-band communications and high capacity, wireless backhaul radio systems. All data is taken with the chip in a 50 Ω test fixture connected via a 3 mil wide × 0.5 mil thick × 7 mil long ribbon on each port.
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Suppliers

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Product
Description
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mmW LNA - HMC8325 - Richardson RFPD
Downers Grove, IL, United States
mmW LNA
HMC8325
mmW LNA HMC8325
The HMC8325 is an integrated E-band gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), low noise amplifier (LNA) chip that operates from 71 GHz to 86 GHz. The HMC8325 provides 21 dB of gain, 13 dBm of output P1dB, 22 dBm of OIP3, and 17 dBm of PSAT while requiring only 50 mA from a 3 V power supply. The HMC8325 exhibits excellent linearity and is optimized for E-band communications and high capacity, wireless backhaul radio systems. All data is taken with the chip in a 50 Ω test fixture connected via a 3 mil wide × 0.5 mil thick × 7 mil long ribbon on each port.

The HMC8325 is an integrated E-band gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), low noise amplifier (LNA) chip that operates from 71 GHz to 86 GHz. The HMC8325 provides 21 dB of gain, 13 dBm of output P1dB, 22 dBm of OIP3, and 17 dBm of PSAT while requiring only 50 mA from a 3 V power supply. The HMC8325 exhibits excellent linearity and is optimized for E-band communications and high capacity, wireless backhaul radio systems. All data is taken with the chip in a 50 Ω test fixture connected via a 3 mil wide × 0.5 mil thick × 7 mil long ribbon on each port.

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Technical Specifications

  Richardson RFPD
Product Category RF Amplifiers
Product Number HMC8325
Product Name mmW LNA
Amplifier Type Low Noise Amplifier
Frequency Range 71000 to 86000 MHz
Maximum Gain 21 dB
Output Power 13 dBm
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