Richardson RFPD mmW VGA HMC8120-SX

Description
The HMC8120 is an integrated E-band, gallium arsenide (GaAs), pseudomorphic (pHEMT), monolithic microwave integrated circuit (MMIC), variable gain amplifier and/or driver amplifier that operates from 71 GHz to 76 GHz. The HMC8120 provides up to 22 dB of gain, 21 dBm of output P1dB, 30 dBm of OIP3, and 22 dBm of PSAT while requiring only 250 mA from a 4 V power supply. Two gain control voltages (VCTL1 and VCTL2) are provided to allow up to 15 dB of variable gain control. The HMC8120 exhibits excellent linearity and is optimized for E-band communications and high capacity wireless backhaul radio systems. All data is taken with the chip in a 50 Ω test fixture connected via a 3 mil wide × 0.5 mil thick × 7 mil long ribbon on each port.
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Description
The HMC8120 is an integrated E-band, gallium arsenide (GaAs), pseudomorphic (pHEMT), monolithic microwave integrated circuit (MMIC), variable gain amplifier and/or driver amplifier that operates from 71 GHz to 76 GHz. The HMC8120 provides up to 22 dB of gain, 21 dBm of output P1dB, 30 dBm of OIP3, and 22 dBm of PSAT while requiring only 250 mA from a 4 V power supply. Two gain control voltages (VCTL1 and VCTL2) are provided to allow up to 15 dB of variable gain control. The HMC8120 exhibits excellent linearity and is optimized for E-band communications and high capacity wireless backhaul radio systems. All data is taken with the chip in a 50 Ω test fixture connected via a 3 mil wide × 0.5 mil thick × 7 mil long ribbon on each port.
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Suppliers

Company
Product
Description
Supplier Links
mmW VGA - HMC8120-SX - Richardson RFPD
Downers Grove, IL, United States
mmW VGA
HMC8120-SX
mmW VGA HMC8120-SX
The HMC8120 is an integrated E-band, gallium arsenide (GaAs), pseudomorphic (pHEMT), monolithic microwave integrated circuit (MMIC), variable gain amplifier and/or driver amplifier that operates from 71 GHz to 76 GHz. The HMC8120 provides up to 22 dB of gain, 21 dBm of output P1dB, 30 dBm of OIP3, and 22 dBm of PSAT while requiring only 250 mA from a 4 V power supply. Two gain control voltages (VCTL1 and VCTL2) are provided to allow up to 15 dB of variable gain control. The HMC8120 exhibits excellent linearity and is optimized for E-band communications and high capacity wireless backhaul radio systems. All data is taken with the chip in a 50 Ω test fixture connected via a 3 mil wide × 0.5 mil thick × 7 mil long ribbon on each port.

The HMC8120 is an integrated E-band, gallium arsenide (GaAs), pseudomorphic (pHEMT), monolithic microwave integrated circuit (MMIC), variable gain amplifier and/or driver amplifier that operates from 71 GHz to 76 GHz. The HMC8120 provides up to 22 dB of gain, 21 dBm of output P1dB, 30 dBm of OIP3, and 22 dBm of PSAT while requiring only 250 mA from a 4 V power supply. Two gain control voltages (VCTL1 and VCTL2) are provided to allow up to 15 dB of variable gain control. The HMC8120 exhibits excellent linearity and is optimized for E-band communications and high capacity wireless backhaul radio systems. All data is taken with the chip in a 50 Ω test fixture connected via a 3 mil wide × 0.5 mil thick × 7 mil long ribbon on each port.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF Amplifiers
Product Number HMC8120-SX
Product Name mmW VGA
Frequency Range 71000 to 76000 MHz
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