Manufacturer: Rohm Semiconductor
Win Source Part Number: 1324587-SCT3080KRC14
Category: Discrete Semiconductor Products>Transistors
Packaging: Tube
Standard Package: 30
Mounting: Through Hole
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Power Dissipation (Max): 165W
Supplier Device Package: TO-247-4L
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V
Vgs (Max): +22V, -4V
Temperature Range - Operating: 175°C (TJ)
Case / Package: TO-247-4
ECCN: EAR99
Fake Threat In the Open Market: 70
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: SCT3080KRC14-ND,846-
Base Product Number: SCT3080
Drive Voltage (Max Rds On, Min Rds On): 18V
RoHS Status: ROHS3 Compliant
N-Channel 1200V 31A (Tc) 165W Through Hole TO-247-4L
SICFET N-CH 1200V 31A TO247-4L Product overview: SCT3080KRC14 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 31A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200V, 31A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SCT3080KRC14 can be used for catalog matching and distributor lookup.
SICFET N-CH 1200V 31A TO247-4L
1200V NCH SIC TRENCH MOSFET IN 4
MOSFET, N-CH, 1.2KV, 31A, 175DEG C, 165W ROHS COMPLIANT: YES
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1324587-SCT3080KRC14 | 846-SCT3080KRC14-ND | 278-SCT3080KRC14 | SCT3080KRC14 | 687-SCT3080KRC14 | SCT3080KRC14 | 34AH2698 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | 1200V 31A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | 1200V NCH SIC TRENCH MOSFET IN 4 | MOSFET | Mosfet, N-Ch, 1.2Kv, 31A, 175Deg C, 165W Rohs Compliant Rohm |
| Polarity | N-Channel | N-Channel | N-Channel | ||||
| Package Type | TO-247; SOT3; TO-247-4 | TO-247; TO-247-4 | Tube | TO-247; TO-247-4 | TO-3 | ||
| Transistor Technology / Material | Silicon Carbide | ||||||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | |||||
| Transconductance | 0.0044 kS |