The RUF020N02 is an N-channel MOSFET designed for switching applications, featuring a 20V drain-source voltage rating and a continuous drain current of ±2A. It is packaged in a TUMT3 surface-mount case with a power dissipation of 0.8W. The device supports 1.5V gate drive and has a maximum on-resistance of 105mΩ at 4.5V gate voltage and 2A drain current. It includes a built-in gate-source protection diode and is RoHS compliant. The junction temperature operates from -55°C to +150°C, and thermal resistance is 156°C/W on a ceramic board. Gate charge and switching characteristics are specified for pulse operation under defined conditions.
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 1244701-RUF020N02
Manufacturer Homepage: www.rohm.com
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | Win Source Electronics | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RUF020N02 | RUF020N02 | 1244701-RUF020N02 |
| Product Name | 1.5V Drive Nch MOSFET | 1.5V Drive Nch MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RUF020N02 |
| Polarity | N-Channel | N-Channel | |
| V(BR)DSS | 20 volts | 20 volts | |
| IDSS | 2000 milliamps | 2000 milliamps | |
| PD | 800 milliwatts | 800 milliwatts |
