The RUC002N05 is an N-channel MOSFET designed for low-voltage switching applications, featuring a 50V drain-source breakdown voltage and a maximum continuous drain current of 200mA. It is packaged in an SOT-23 case with an ultra-low drive voltage of 1.2V and a maximum on-state resistance of 7.2Ω at 1.2V gate-source voltage. The device supports a power dissipation of 350mW and operates with a junction temperature range of -55°C to +150°C. It is RoHS compliant and halogen-free, with a marking code of RH and supplied in tape and reel packaging of 3000 pieces per reel. Thermal resistance is specified up to 625°C/W on an FR4 board.
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 1244687-RUC002N05
Manufacturer Homepage: www.rohm.com
Alternative Parts (Cross-Reference): BSS138-7-F; 2SK2569ZN-TR-E;
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Sufficient
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | Win Source Electronics | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RUC002N05 | RUC002N05 | 1244687-RUC002N05 |
| Product Name | 1.2V Drive Nch MOSFET | 1.2V Drive Nch MOSFET | Electrical Parts - RUC002N05 |
| Polarity | N-Channel | N-Channel | |
| V(BR)DSS | 50 volts | 50 volts | |
| IDSS | 200 milliamps | 200 milliamps | |
| PD | 200 milliwatts | 200 milliwatts |
