ROHM Semiconductor GmbH 4V Drive Nch MOSFET RXH090N03

The RXH090N03 is a 4V Drive N-channel MOSFET from ROHM Semiconductor GmbH, designed for switching applications. It features a low on-resistance, which enhances efficiency in power management. The device has a maximum drain-source voltage of 30V and can handle continuous drain currents of up to ¬±9A, with pulsed currents reaching ¬±36A. The gate-source voltage is rated at ¬±20V, and the power dissipation capability is 2.0W. This MOSFET includes a built-in gate-source protection diode and is packaged in a compact SOP8 surface mount format, making it suitable for space-constrained applications. The device operates effectively within a channel temperature range of -55¬8C to +150¬8C, with a thermal resistance from channel to ambient of 62.5¬8C/W. The RXH090N03 is characterized by a gate threshold voltage between 1.0V and 2.5V, and it exhibits low input capacitance of 440pF, which contributes to faster switching times. Engineers considering this MOSFET for their projects should evaluate its specifications against their application requirements, particularly in terms of voltage, current handling, and thermal performance.