RTF016N05 is an N-channel 45V MOSFET designed for switching applications, housed in a TUMT3 surface-mount package with a continuous drain current rating of ±1.6A and a maximum power dissipation of 0.8W. It features a maximum on-resistance of 190mΩ at 4.5V gate drive and includes a built-in gate-source protection diode. The device is RoHS compliant and operates over a junction temperature range of -55°C to +150°C.
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RTF016N05 | RTF016N05 |
| Product Name | Nch 45V 1.6A Small Signal MOSFET | Nch 45V 1.6A Small Signal MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 45 volts | 45 volts |
| IDSS | 1600 milliamps | 1600 milliamps |
| PD | 800 milliwatts | 800 milliwatts |
