The RUM002N05 is an N-channel MOSFET designed for low-voltage switching applications, packaged in the VMT3 surface-mount format. It operates with a maximum drain-source voltage of 50 V and continuous drain current of ±200 mA, with a power dissipation limit of 150 mW. The device features ultra-low voltage drive capability at 1.2 V and a maximum on-state resistance of 7.2 Ω at 1.2 V gate-source voltage. Junction temperature ranges from -55 °C to +150 °C, and it complies with RoHS standards. The part is supplied in 8,000-piece tape reels on an 180 mm reel, with taping code T2L and marking RH.
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 1244704-RUM002N05
Manufacturer Homepage: www.rohm.com
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Sufficient
1.2V Drive Nch MOSFET Product overview: RUM002N05 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.2V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1.2V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-RUM002N05 can be used for catalog matching and distributor lookup.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RUM002N05 | RUM002N05 | 1244704-RUM002N05 | 285-RUM002N05 |
| Product Name | 1.2V Drive Nch MOSFET | 1.2V Drive Nch MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RUM002N05 | 1.2V MOSFET Transistor |
| Polarity | N-Channel | N-Channel | ||
| V(BR)DSS | 50 volts | 50 volts | ||
| IDSS | 200 milliamps | 200 milliamps | ||
| PD | 150 milliwatts | 150 milliwatts |
