ROHM Semiconductor USA, LLC Single FETs, MOSFETs RTE002P02TL

MOSFET P-CH 20V 200MA EMT3

P-Channel 20V 200mA (Ta) 150mW (Ta) Surface Mount EMT3

P-Channel 20V 200mA (Ta) 150mW (Ta) Surface Mount EMT3

P-Channel 20V 200mA (Ta) 150mW (Ta) Surface Mount EMT3

MOSFET P-CH 20V 200MA EMT3 Product overview: RTE002P02TL from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 200MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 200MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RTE002P02TL can be used for catalog matching and distributor lookup.

Manufacturer: Rohm Semiconductor
Win Source Part Number: 027625-RTE002P02TL
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 150mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Not For New Designs
Temperature Range - Operating: 150°C (TJ)
Case / Package: EMT3
Dimension: SC-75, SOT-416
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 200mA (Ta)
Gate-Source Threshold Voltage: 2V @ 1mA
Max Input Capacitance: 50pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 1.5 Ohm @ 200mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance