The Rohm N-Channel MOSFET, part number 82AC3084, features a maximum drain-source voltage (VDS) of 20V and a continuous drain current (ID) rating of ¬±150mA. It has a maximum power dissipation of 100mW and an on-resistance (RDS(on)) of 1.4Oc at a gate-source voltage (VGS) of 4.5V. The device is housed in a compact DFN0806-3 package, making it suitable for space-constrained applications. It is RoHS compliant and halogen-free, ensuring it meets environmental standards. The operating temperature range is from -55¬8C to +150¬8C, providing versatility for various applications. This MOSFET is ideal for low-power switching applications, but engineers should consider its limitations in high-reliability environments.
N-Channel 20V 150mA (Ta) 100mW (Ta) Surface Mount VML0806
N-Channel 20V 150mA (Ta) 100mW (Ta) Surface Mount VML0806
N-Channel 20V 150mA (Ta) 100mW (Ta) Surface Mount VML0806
MOSFET N-CH 20V 150MA VML0806 Product overview: RV1C002UNT2CL from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 150MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 150MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RV1C002UNT2CL can be used for catalog matching and distributor lookup.
MOSFET N-CH 20V 150MA VML0806
Manufacturer: Rohm Semiconductor
Win Source Part Number: 1093100-RV1C002UNT2C
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 100mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: VML0806
Dimension: 3-SMD, No Lead
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 150mA (Ta)
Gate-Source Threshold Voltage: 1V @ 100μA
Max Input Capacitance: 12pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 2 Ohm @ 150mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Sufficient
DFN-3(0.8x0.6) MOSFETs ROHS
MOSFET, N-CH, 20V, 0.15A, 0.1W; Transistor Polarity:N Channel; Continuous Drain Current Id:150mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):1.4ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Dissipation RoHS Compliant: Yes
MOSFET Nch Small Signal MOSFET
MOSFET N-CH 20V 150MA VML0806
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | RV1C002UNT2CLCT-ND | 278-RV1C002UNT2CL | RV1C002UNT2CL | 1093100-RV1C002UNT2CL | RV1C002UNT2CL | 82AC3084 | RV1C002UNT2CL | RV1C002UNT2CL |
| Product Name | Single FETs, MOSFETs | 20V 150MA MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RV1C002UNT2CL | Triode/MOS Tube/Transistor >> MOSFETs | Mosfet, N-Ch, 20V, 0.15A, 0.1W; Transistor Polarity Rohm | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | ||||
| Package Type | 3-SMD, No Lead | Tape & Reel (TR) | 3-SMD, No Lead | SOT3; VML0806 | TO-3 | 3-SMD, No Lead | ||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | |||||
| Transconductance | 1.10E-4 kS |
