RV3CA01ZP is a P-channel MOSFET designed for reverse and overvoltage protection in portable equipment, featuring an ultra-small DFN0604-3 package measuring 0.6×0.4×0.36 mm. It has a drain-source voltage rating of -20 V, a continuous drain current of ±100 mA, and a maximum power dissipation of 100 mW. The device supports low-voltage drive down to -1.5 V and includes a built-in ESD protection diode with a zener voltage between -6.8 V and -10 V. Thermal resistance junction-to-ambient is 1250 °C/W. The part meets RoHS standards and is packaged in an embossed tape reel of 8 mm width with 8000 pieces per reel. Operating junction and storage temperature range is -55 to +150 °C.
RV3CA01ZP is the 0604 size ultra-small package MOSFET for portable devices.
RV3CA01ZP is the 0604 size ultra-small package MOSFET for for portable devices.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RV3CA01ZP | RV3CA01ZP |
| Product Name | Pch -20V -100mA Small Signal MOSFET | Pch -20V -100mA Small Signal MOSFET |
| Polarity | P-Channel | P-Channel |
| V(BR)DSS | -20 volts | -20 volts |
| IDSS | -100 milliamps | -100 milliamps |
| PD | 100 milliwatts | 100 milliwatts |
