ROHM Semiconductor USA, LLC Single FETs, MOSFETs RSS100N03TB

Description
N-Channel 30V 10A (Ta) 2W (Ta) Surface Mount 8-SOP
Request a Quote Datasheet
Description
N-Channel 30V 10A (Ta) 2W (Ta) Surface Mount 8-SOP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - RSS100N03TBTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
RSS100N03TBTR-ND
Single FETs, MOSFETs RSS100N03TBTR-ND
N-Channel 30V 10A (Ta) 2W (Ta) Surface Mount 8-SOP

N-Channel 30V 10A (Ta) 2W (Ta) Surface Mount 8-SOP

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RSS100N03TB - 027535-RSS100N03TB - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RSS100N03TB
027535-RSS100N03TB
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RSS100N03TB 027535-RSS100N03TB
Manufacturer: Rohm Semiconductor Win Source Part Number: 027535-RSS100N03TB Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SOP Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 10A (Ta) Gate-Source Threshold Voltage: 2.5V @ 1mA Max Gate Charge: 14nC @ 5V Max Input Capacitance: 1070pF @ 10V Maximum Gate-Source Voltage: 20V Maximum Rds On at Id,Vgs: 13 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Sufficient

Manufacturer: Rohm Semiconductor
Win Source Part Number: 027535-RSS100N03TB
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-SOP
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 10A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 14nC @ 5V
Max Input Capacitance: 1070pF @ 10V
Maximum Gate-Source Voltage: 20V
Maximum Rds On at Id,Vgs: 13 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RSS100N03TB - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
RSS100N03TB
Discrete Semiconductor Products - Transistors - FETs, MOSFETs RSS100N03TB
MOSFET N-CH 30V 10A 8SOP

MOSFET N-CH 30V 10A 8SOP

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number RSS100N03TBTR-ND 027535-RSS100N03TB RSS100N03TB
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - RSS100N03TB Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3; 8-SOP 8-SOIC (0.154, 3.90mm Width)
V(BR)DSS 30 volts
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