ROHM Semiconductor USA, LLC Single FETs, MOSFETs RT1C060UNTR

N-Channel 20V 6A (Ta) 650mW (Ta) Surface Mount 8-TSST

Manufacturer: Rohm Semiconductor
Win Source Part Number: 101599-RT1C060UNTR
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 650mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-TSST
Dimension: 8-SMD, Flat Lead
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 6A (Ta)
Gate-Source Threshold Voltage: 1V @ 1mA
Max Gate Charge: 11nC @ 4.5V
Max Input Capacitance: 870pF @ 10V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 28 mOhm @ 6A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance

MOSFET N-CH 20V 6A 8TSST Product overview: RT1C060UNTR from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RT1C060UNTR can be used for catalog matching and distributor lookup.