ROHM Semiconductor USA, LLC Single FETs, MOSFETs RW1E014SNT2R

MOSFET N-CH 30V 1.4A WEMT6

Manufacturer: Rohm Semiconductor
Win Source Part Number: 027662-RW1E014SNT2R
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 700mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 6-WEMT
Dimension: SOT-563, SOT-666
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 1.4A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 1.4nC @ 5V
Max Input Capacitance: 70pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 240 mOhm @ 1.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance

MOSFET N-CH 30V 1.4A WEMT6 Product overview: RW1E014SNT2R from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 1.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 1.4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RW1E014SNT2R can be used for catalog matching and distributor lookup.