Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 094061-RTR040N03
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Not For New Designs
Temperature Range - Operating: 150°C (TJ)
Case / Package: TSMT3
Dimension: SC-96
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 1mA
Max Gate Charge: 8.3nC @ 4.5V
Max Input Capacitance: 475pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 48 mOhm @ 4A, 4.5V
Alternative Parts (Cross-Reference): FDN359BN; TSM240N03CX RFG; ZXMN3F30FH;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Sufficient
| ROHM Semiconductor USA, LLC | Win Source Electronics | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RTR040N03 | 094061-RTR040N03 |
| Product Name | 2.5V Drive Nch MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RTR040N03 |
| Polarity | N-Channel | N-Channel; N-Channel |
| V(BR)DSS | 30 volts | 30 volts |
| IDSS | 4000 milliamps | |
| PD | 1000 milliwatts | 1000 milliwatts |
