The SCT2080KE is an N-channel silicon carbide (SiC) power MOSFET designed for high-voltage switching applications such as solar inverters, DC/DC converters, and motor drives. It is packaged in a TO-247N case with a maximum drain-source voltage of 1200 V and a continuous drain current of 40 A at 25°C. The device has a typical on-resistance of 80 mΩ at 25°C and a junction temperature range of -55°C to 175°C. It features fast switching and reverse recovery, low gate charge, and RoHS compliance. Thermal resistance from junction to case is 0.44-0.57 °C/W. The part meets RoHS standards and is rated for pulsed operation up to 80 A.
This is an SiC (Silicon Carbide) planar MOSFET. (SiC-SBD not co-packed) Features include high voltage resistance, low ON resistance, and fast switching speed.
This is an SiC (Silicon Carbide) planar MOSFET. (SiC-SBD not co-packed) Features include high voltage resistance, low ON resistance, and fast switching speed.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SCT2080KE | SCT2080KE |
| Product Name | 1200V, 40A, THD, Silicon-carbide (SiC) MOSFET | SiC MOSFET |
| Package Type | TO-247; TO-247N | TO-247 |
| Transistor Grade / Operating Range | Commercial | |
| Transistor Technology / Material | SiC | |
| V(BR)DSS | 1200 volts | |
| IDSS | 40000 milliamps |
