ROHM Semiconductor USA, LLC Single FETs, MOSFETs RZF013P01TL

Description
MOSFET P-CH 12V 1.3A TUMT3
Request a Quote Datasheet
Description
MOSFET P-CH 12V 1.3A TUMT3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - RZF013P01TL - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
RZF013P01TL
Single FETs, MOSFETs RZF013P01TL
MOSFET P-CH 12V 1.3A TUMT3

MOSFET P-CH 12V 1.3A TUMT3

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RZF013P01TL - 1093151-RZF013P01TL - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RZF013P01TL
1093151-RZF013P01TL
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RZF013P01TL 1093151-RZF013P01TL
Manufacturer: Rohm Semiconductor Win Source Part Number: 1093151-RZF013P01TL Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 800mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TUMT3 Dimension: 3-SMD, Flat Leads Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 1.3A (Ta) Gate-Source Threshold Voltage: 1V @ 1mA Max Gate Charge: 2.4nC @ 4.5V Max Input Capacitance: 290pF @ 6V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 260 mOhm @ 1.3A, 4.5V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Sufficient

Manufacturer: Rohm Semiconductor
Win Source Part Number: 1093151-RZF013P01TL
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 800mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TUMT3
Dimension: 3-SMD, Flat Leads
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 1.3A (Ta)
Gate-Source Threshold Voltage: 1V @ 1mA
Max Gate Charge: 2.4nC @ 4.5V
Max Input Capacitance: 290pF @ 6V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 260 mOhm @ 1.3A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - RZF013P01TLCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
RZF013P01TLCT-ND
Single FETs, MOSFETs RZF013P01TLCT-ND
P-Channel 12V 1.3A (Ta) 800mW (Ta) Surface Mount TUMT3

P-Channel 12V 1.3A (Ta) 800mW (Ta) Surface Mount TUMT3

Buy Now Datasheet
Single FETs, MOSFETs - RZF013P01TLDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
RZF013P01TLDKR-ND
Single FETs, MOSFETs RZF013P01TLDKR-ND
P-Channel 12V 1.3A (Ta) 800mW (Ta) Surface Mount TUMT3

P-Channel 12V 1.3A (Ta) 800mW (Ta) Surface Mount TUMT3

Buy Now Datasheet
Single FETs, MOSFETs - RZF013P01TLTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
RZF013P01TLTR-ND
Single FETs, MOSFETs RZF013P01TLTR-ND
P-Channel 12V 1.3A (Ta) 800mW (Ta) Surface Mount TUMT3

P-Channel 12V 1.3A (Ta) 800mW (Ta) Surface Mount TUMT3

Buy Now Datasheet
MOSFET P-CH 12V 1.3A TUMT3 - 687-RZF013P01TL - Utmel Electronic Limited
Hong Kong, China
MOSFET P-CH 12V 1.3A TUMT3
687-RZF013P01TL
MOSFET P-CH 12V 1.3A TUMT3 687-RZF013P01TL
MOSFET P-CH 12V 1.3A TUMT3

MOSFET P-CH 12V 1.3A TUMT3

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RZF013P01TL - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
RZF013P01TL
Discrete Semiconductor Products - Transistors - FETs, MOSFETs RZF013P01TL
MOSFET P-CH 12V 1.3A TUMT3

MOSFET P-CH 12V 1.3A TUMT3

Supplier's Site
Mosfet, P-Ch, -12V, -1.3A, Sot-323T; Transistor Polarity Rohm - 10AC9001 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, -12V, -1.3A, Sot-323T; Transistor Polarity Rohm
10AC9001
Mosfet, P-Ch, -12V, -1.3A, Sot-323T; Transistor Polarity Rohm 10AC9001
MOSFET, P-CH, -12V, -1.3A, SOT-323T; Transistor Polarity:P Channel; Continuous Drain Current Id:-1.3A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.19ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1V; Power RoHS Compliant: Yes

MOSFET, P-CH, -12V, -1.3A, SOT-323T; Transistor Polarity:P Channel; Continuous Drain Current Id:-1.3A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.19ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 1.5V Drive Pch MOSFET

MOSFET 1.5V Drive Pch MOSFET

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number RZF013P01TL 1093151-RZF013P01TL RZF013P01TLCT-ND 687-RZF013P01TL RZF013P01TL 10AC9001 RZF013P01TL
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - RZF013P01TL Single FETs, MOSFETs MOSFET P-CH 12V 1.3A TUMT3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, P-Ch, -12V, -1.3A, Sot-323T; Transistor Polarity Rohm MOSFET
Polarity P-Channel; P-Channel P-Channel; P-Channel P-Channel
Transistor Technology / Material MOSFET (Metal Oxide) SILICON
V(BR)DSS 12 volts 12 volts 12 volts
IDSS 1300 milliamps -1300 milliamps
PD 800 milliwatts 800 milliwatts 800 milliwatts
Unlock Full Specs
to access all available technical data