MOSFET P-CH 12V 1.3A TUMT3 Product overview: RZF013P01TL from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 1.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 1.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RZF013P01TL can be used for catalog matching and distributor lookup.
P-Channel 12V 1.3A (Ta) 800mW (Ta) Surface Mount TUMT3
P-Channel 12V 1.3A (Ta) 800mW (Ta) Surface Mount TUMT3
P-Channel 12V 1.3A (Ta) 800mW (Ta) Surface Mount TUMT3
Manufacturer: Rohm Semiconductor
Win Source Part Number: 1093151-RZF013P01TL
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 800mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TUMT3
Dimension: 3-SMD, Flat Leads
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 1.3A (Ta)
Gate-Source Threshold Voltage: 1V @ 1mA
Max Gate Charge: 2.4nC @ 4.5V
Max Input Capacitance: 290pF @ 6V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 260 mOhm @ 1.3A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Sufficient
MOSFET P-CH 12V 1.3A TUMT3
MOSFET, P-CH, -12V, -1.3A, SOT-323T; Transistor Polarity:P Channel; Continuous Drain Current Id:-1.3A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.19ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1V; Power RoHS Compliant: Yes
MOSFET P-CH 12V 1.3A TUMT3
MOSFET P-CH 12V 1.3A TUMT3
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-RZF013P01TL | RZF013P01TLCT-ND | 1093151-RZF013P01TL | RZF013P01TL | 10AC9001 | 687-RZF013P01TL | RZF013P01TL | RZF013P01TL |
| Product Name | 12V 1.3A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RZF013P01TL | Single FETs, MOSFETs | Mosfet, P-Ch, -12V, -1.3A, Sot-323T; Transistor Polarity Rohm | MOSFET P-CH 12V 1.3A TUMT3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | ||||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | ||||||
| Transconductance | 0.0014 kS | |||||||
| PD | 800 milliwatts | 800 milliwatts | 800 milliwatts | 800 milliwatts | ||||
| TJ | 150 C (302 F) | 150 C (302 F) | 150 C (302 F) | 150 C (302 F) |
